2N7002L

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The 2N7002L is an N-channel enhancement mode logic level field effect transistor (FET) made from silicon-gate CMOS (Complementary Metal Oxide Semiconductor). This low threshold voltage FET is suitable for a wide range of applications, as it can be used in everything from memory circuits, to sensor monitors and level-setting circuits, to power supplies. It exhibits excellent electrical characteristics, including high speed switching and low input capacitance. The 2N7002L is capable of delivering high levels of current, as well as being able to operate at a wide range of temperatures.

The 2N7002L’s application field includes, but is not limited to, a motor control system, a counter power supply, a power switch circuit, a DC/DC converter, a sound amplifier, a voltage, current and impedance converter, a microphone amplifier, a color television, a audio preamplifier, a comparator, a data logging switch, a temperature regulator, a base station and a switching regulator.

The 2N7002L’s working principle involves the use of positive and negative voltage polarities to control the electric flow and allow for the modulation of the electrical current. The positive voltage is applied to the gate, and then to the source, which turns on the transistor. As the voltage is increased, this allows the FET to open, thereby allowing the current to flow from the drain to the source, and the device is said to be “on”. The negative voltage is then applied to the gate, and then to the source, which turns off the transistor, or as it is said, “off”.

The 2N7002L is a remarkably powerful transistor, capable of providing levels of current and functionality surpassing other more standard FETs. Its ability to operate at very low temperatures is also a distinct advantage, as it can be used in areas where temperatures may be extreme. With its wide range of applications, and its efficient working principle, the 2N7002L is certainly an asset to any circuit design.

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