2N7051_D10Z Allicdata Electronics
Allicdata Part #:

2N7051_D10Z-ND

Manufacturer Part#:

2N7051_D10Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 100V 1.5A TO-92
More Detail: Bipolar (BJT) Transistor NPN - Darlington 100V 1.5...
DataSheet: 2N7051_D10Z datasheet2N7051_D10Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 5V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N7051
Description

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The 2N7051_D10Z is a type of a bipolar junction transistor (BJT). The BJT is one of the most widely used transistor structures and it consists of three layers of semiconductor material where two are differently doped, forming the transistor’s junction and thus the structure of the BJT. The 2N7051_D10Z is a single-channel PNP type device that can be used for a variety of different applications.

Compared to other devices, BJTs provide higher current gains and higher input impedances while providing low noise, making them widely popular in the field of electronics.

The 2N7051_D10Z can be used as both a switch and an amplifier as it has a high current gain with a fairly low voltage across its three terminals. The current gains of the device depends on both the intrinsic gain value ( hFE) and the collector current. The gain is the ratio of the collector current (Ic) to the base current (Ib):

Gain (hFE)= Ic / Ib

The 2N7051_D10Z is also use for high frequency applications. It has a high transition frequency for a small BJT (usually above 500 kHz). This makes it suitable for applications such as switching power supplies, amplifiers, and op-amps. Additionally, it has a low fT (frequency cutoff between cutoff and saturation) of around 1.8GHz.

Additionally, the 2N7051_D10Z has a low noise figure, making it suitable for low-noise applications such as voltage regulators, filters, and comparators. It also has low thermal resistance, making it suitable for applications which require a high power dissipation. This can be beneficial in situations where higher currents and/or voltages are required.

Working Principle

The 2N7051_D10Z consists of two independent transistors with the base and collector connected so that the input signal can be applied to the base and fed directly to the collector. The collector is thus the output terminal. The base-emitter diode allows for current flow from the base to the emitter, which then flows from the collector to the emitter. When a voltage is applied to the base, it will create a current which will then flow from the collector to the emitter. This current can then be amplified or used as a switch by adjusting the applied current.

The 2N7051_D10Z is also able to act as an amplifier as it can increase the input signal strength, allowing for larger signals to be processed. The device is able to do this because it is able to create a voltage gain and allow for the output signals to be higher than the input signals. The amount of gain is determined by the ratio of collector current to base current.

The 2N7051_D10Z is a reliable and resilient device as it is able to function at elevated temperatures and still maintain a high level of performance. This makes the device ideal for applications where high reliability is necessary, such as in medical and spacecraft applications.

Overall, the 2N7051_D10Z is a versatile device that is able to perform a variety of tasks. It is a low noise device with a high current gain and it is able to act both as a switch and an amplifier. Additionally, it has a high transition frequency and a low thermal resistance, making it suitable for several applications.

The specific data is subject to PDF, and the above content is for reference

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