2N7002WKX-7

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The 2N7002WKX-7 is a voltage controlled MOSFET with a Vds drain-source voltage of 30 volts and an Id drain current of 200 mA. The FET’s channel width and channel length are 2,000 and 250 nanometers, respectively.

The 2N7002WKX-7 falls within the single MOSFET classification and offers several advantages to users due to its high current-handling capability and relatively small size. Its internal construction features an insulated gate which carries no charge, so no gate current is needed, and it’s also more immune to mechanical shock and vibration than other transistors.

2N7002WKX-7 Application Field

The 2N7002WKX-7 is suitable for applications such as audio circuits, power supplies, DC-DC converters and switching regulators. Additionally, MOSFETs become particularly useful for higher-power simulations, as their low equivalent gate capacitance allows for faster switching with fewer fluctuations in power supply.

Thanks to their relatively low resistance and good current handling capability, the 2N7002WKX-7 is commonly used in robotics and motor control systems. The FETs have also found use in construction of switch-mode DC power supplies, as well as a variety of other amplifier applications, due to their high on-state characteristics.

The 2N7002WKX-7 has many applications in the industrial, automotive, and consumer markets. For example, it can be used in circuit protection devices, analog circuits, and light emitting diodes (LEDs). It can also be used to power various motors and actuators.

2N7002WKX-7 Working Principle

The 2N7002WKX-7 uses Vgs voltage to control the amount of drain-source current that flows through it. As the gate-source voltage increases, the MOSFET will increase the drain-source current, thereby allowing more current to flow through the load that’s connected to its drain. Therefore, the 2N7002WKX-7 acts as a variable resistor, changing its resistance with changes in the Vgs voltage.

The 2N7002WKX-7 is an enhancement type MOSFET, which means its on-state resistance is constant when Vgs is greater than the threshold voltage. When the voltage is below the threshold voltage, the drain-source resistance will increase, limiting the current that can flow through the FET. This feature helps to protect the device from accidental overload or short-circuit damage.

The FET’s insulation-gate construction also greatly reduces the chances of it moving into a conducts state by noise, EMI and other forms of disturbance, as the gate has no charge and does not require any voltage to stay turned off electronically.

The 2N7002WKX-7 is a versatile and reliable MOSFET that can easily be integrated into variety of circuit designs due to its suitable Vs characteristics, current handling capabilities and small size.

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