
2N7002H-7 Discrete Semiconductor Products |
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Allicdata Part #: | 2N7002H-7DITR-ND |
Manufacturer Part#: |
2N7002H-7 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 0.17A SOT23-3 |
More Detail: | N-Channel 60V 170mA (Ta) 370mW (Ta) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 6000 |
3000 +: | $ 0.03166 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 370mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 26pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 0.35nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7.5 Ohm @ 50mA, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 170mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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2N7002H-7 is a small size N-channel surface mount MOSFET with low capacitance and low ON resistance which makes it useful in many applications. It is a high voltage power MOSFET with a high break down voltage, high input impedance and low ON resistance. The device is a single FET with three terminals- the source, gate and drain. This MOSFET is suitable for a wide range of applications ranging from low power driver and portable power supplies to high power applications such as power converter and durable switching applications.
2N7002H-7 is a high voltage, N-channel enhancement-mode MOSFET which can be used to switch DC and AC loads up to 25V in unipolar and up to 50V in bipolar configurations. It has very low capacitance, ensuring a low output capacitance and making it suitable for switching applications. The device features a low ON resistance which leads to high efficiency in power conversion applications. It also features a fast switching speed, allowing it to be used in applications such as power supply controllers and switching regulators.
The working principle of 2N7002H-7 is similar to that of other MOSFETs, but differs in that it is an enhancement-mode device, meaning that the transistor needs a positive gate-source voltage (VGS) to turn “on”. The device turns “off” when the gate-source voltage (VGS) is 0V or negative. When the transistor is “on”, the drain-source voltage (VDS) is reduced, making it suitable for switching applications such as power conversion, motor control and lighting.
The 2N7002H-7 can be used in a wide array of applications including low power driver applications such as LCD and LED displays, portable power supplies, high power switching systems such as power converter and durable switching applications. Additionally, the transistor may also be used for DC and AC load switching up to 25V in unipolar and up to 50V in bipolar configurations. Additionally, it can also be applied in digital logic circuits, as it has very low capacitance, making it suitable for switching applications.
In summary, 2N7002H-7 is a single N-channel power MOSFET with low capacitance and low ON resistance, designed for high voltage applications such as power conversion and durable switching applications. It can be used for switching DC and AC loads up to 25V in unipolar and up to 50V in bipolar configurations. It is an enhancement-mode transistor which turns “on” when a positive gate-source voltage is applied and turns “off” when the gate-source voltage is 0V or negative. The transistor has a wide range of applications including low power driver and portable power supplies, high power switching systems such as power converter and durable switching applications, as well as digital logic circuits.
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