2N7002PW,115 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.4V @ 250µA
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	260mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	50pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	0.8nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	1.6 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	310mA (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The 2N7002PW,115 is a semiconductor device, commonly referred to as a transistor, that is classified as a field effect transistor (FET). It is a type of single bipolar MOSFET that carries with it a wide range of applications in consumer, industrial, and automotive electronics. To better understand how the 2N7002PW,115 works, it is important to look at its physical construction, working principle, and applications.

Physical Construction

The physical construction of the 2N7002PW,115 starts with its small size, measuring in at only 1.5mm x 1mm. The MOSFET packages a single-die semiconductor die within a dual-gate insulated (DGIS) package and includes both the high-voltage and logic circuitry on one chip. This unique combination of small size and efficient packaging allows the 2N7002PW,115 to be used in small and confined spaces, and with its low power consumption, fits well in applications where space and power are at a premium.

Working Principle

The 2N7002PW,115 operates on the principle of a MOSFET. The device includes three terminals, a source, a drain, and a gate, which control the flow of electrons between the source and drain. A voltage applied to the gate will cause a current to flow between the source and the drain. This current is further controlled by the resistance of the channel between the source and drain, which is controlled by the amount of voltage applied to the gate.

Applications

The combination of its small size and efficient performance makes the 2N7002PW,115 applicable in a variety of scenarios. Its low power consumption and resistance to heat makes it ideal for applications such as integrated circuits, audio amplifiers, and digital displays. It is also commonly used as an energy efficient replacement in a variety of consumer products, such as power supplies and AC/DC converters. In automotive applications, the 2N7002PW,115 is used in power steering systems, electric windows, and fuel-injection systems.

Conclusion

The 2N7002PW,115 is a small single-die FET that packs a lot of punch in a small package. With its combination of small size, low power consumption, and heat resistance, this device is ideal for many consumer and industrial applications. The device also carries with it a variety of automotive applications, making it an indispensable component in the ever-evolving world of electronics.

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