Allicdata Part #: | 2N7053-ND |
Manufacturer Part#: |
2N7053 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 100V 1.5A TO-226 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 100V 1.5... |
DataSheet: | 2N7053 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): | 200nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 1A, 5V |
Power - Max: | 1W |
Frequency - Transition: | 200MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-226 |
Base Part Number: | 2N7053 |
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The 2N7053 is a silicon NPN high-frequency transistor that has several applications, especially for RF and frequency conversion stages. It\'s a part of the bipolar junction transistor (BJT) family, and it is particularly adept at driving high impedance circuits and possess high-speed switching action.
The working principle of the 2N7053 is based on the overall behavior of an NPN BJT. As you know, a bipolar junction transistor consists of two p-doped layers of semiconductor material, a p-type base, and an n-type emitter, separated by a very thin n-type base region. An electrical current flows between the emitter and base due to the applied bias voltage between the emitter and the collector. This current determines the amount of electrons that can enter the base region, thus controlling the amount of current that flows through the collector and emitter.
The 2N7053 can operate at both high and low frequencies, making it ideal for RF and high-frequency applications. It can provide high-power Gain, high voltage Gain and high switching speeds. It is also relatively efficient for low-power applications, making it suitable for low-power applications, such as audio amplifiers. The transistor exhibits both low and high thermal stability, allowing it to be used in temperatures from -55 to +175 °C. This also makes it suitable for high-temperature applications.
The 2N7053 is well-suited for use in RF applications, such as radios and televisions, as it can easily handle high power levels and high voltages. It can also be used in frequency conversion stages, such as in radio receivers and signal mixers, as it can switch between frequencies quickly and efficiently. It is also suitable for low-noise applications, such as audio amplifiers, as it has low levels of thermal noise. Other applications include power supplies, logic circuits, voltage regulators and alarms.
The 2N7053 is a versatile and reliable NPN transistor. It is suitable for a wide range of applications that require good performance at high frequencies and high power levels. Its ability to operate at a wide range of temperatures and its low level of thermal noise makes it an ideal choice for audio applications. Its high-speed switching capability makes it suitable for use in RF and frequency conversion applications, and its low cost make it an attractive choice for many projects.
The specific data is subject to PDF, and the above content is for reference
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