Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	1.5A
Voltage - Collector Emitter Breakdown (Max):	100V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max):	200nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	1000 @ 1A, 5V
Power - Max:	625mW
Frequency - Transition:	200MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3
Base Part Number:	2N7052

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Introduction

2N7052 is a general purpose NPN epitaxial silicon transistor often used in high speed switching applications in both commercial and industrial applications. Its suitable for high frequency amplifier applications, audio amplifiers and high speed switching.

2N7052 Application fields

Because of its high switching speed, low power requirements and flexible output characteristics, 2N7052 is usually used in high speed switching applications including computer processor, motor control, communication systems, television and some testing systems. 2N7052 is also used as high frequency amplifying transistors for amplifier applications. It produces low distortion and high bandwidth for audio signals on amplifiers. Due to its high speed, it is also suitable for instrumentation amplifiers and radio frequency amplifiers. 2N7052 is a general purpose transistor which can also be used in low frequency analog amplifier circuits. It can produce low voltage amplification and can provide stable operation over a wide range of temperatures. 2N7052 is also a good choice for Schmitt trigger circuits due to its fast switching speed and wide operating temperature range.

2N7052 Working principle

2N7052 is a NPN bi-polar junction transistor (BJT) with one collector, one emitter, and one base terminal. When a forward bias voltage is applied at the base-emitter junction, majority carriers (electrons) flow from the emitter to the collector and minority carriers (holes) flow from the collector to the emitter. This makes the transistor conduct current which is amplified and output at the collector terminal. The gain of the 2N7052 is controlled by the DC base current which controls the base-emitter current. A higher amount of base current results in a higher output current, resulting in higher gain. The output current is also affected by the supply voltage and temperature, resulting in improved performance over variations in these parameters. The 2N7052 can also be used as a switching device and it is this capability that makes it suitable for use in high-frequency switching applications. When the base current exceeds a certain level (based on temperature, supply voltage and other parameters), the transistor enters saturation state, meaning the collector-emitter voltage drop is very small, allowing the transistor to transmit a high amount of current from the collector to the emitter. When the base current drops below a certain level, the transistor is forced back into the cut-off state, meaning the collector-emitter voltage drop is large and current cannot flow through the transistor. This allows the transistor to act as a switch and it can be used to control larger currents.

Conclusion

2N7052 is a general purpose NPN epitaxial silicon transistor which can be used in a variety of applications. It is suitable for high speed switching, audio amplifiers, instrumentation amplifiers and Schmitt trigger circuits due to its fast switching speed, low distortion and wide operating temperature range. The gain of the transistor is controlled by the DC base current, which is affected by temperature, supply voltage and other parameters, resulting in improved performance.

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