Allicdata Part #: | 2N7000BU_T-ND |
Manufacturer Part#: |
2N7000BU_T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V TO92 |
More Detail: | N-Channel 60V 200mA (Tc) 400mW (Ta) Through Hole T... |
DataSheet: | 2N7000BU_T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Base Part Number: | 2N7000 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 400mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 200mA (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The 2N7000BU_T is a popular choice for many electronic applications, as it is a versatile Field Effect Transistor (FET). FETs allow a circuit to be switched on or off depending on the input voltage. They are commonly found in power amplifiers, oscillators, and other circuitry used in audio, video, communication and automotive electronics.
The 2N7000BU_T is a N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor), meaning it can only be switched on by an input voltage. When the input voltage is applied, it changes the electric field between the source and the drain terminals, causing a conducting channel to form. This channel forms the gate to the device, allowing current to flow from source to drain.
The 2N7000BU_T can handle 0.2A (max) of current and is rated for 20V (max). It is optimized for use in digital switching circuits, as it has an incredibly fast switching speed. It is also commonly used in audio amplifiers as well as automotive, robotics and lighting applications.
The 2N7000BU_T is able to handle up to 60V (max) at 1.5A (max) with a fast switching time, making it ideal for high-power applications. It also has an exceptionally low input on-resistance, allowing for maximum efficiency in power applications. It can also be easily combined with other components to create an integrated circuit that allows for the control of multiple devices.
In addition to its versatile use in power applications, the 2N7000BU_T is also commonly used in sensor circuits and radio frequency circuits. It is commonly used to control the input of receiving and transmitting circuits as well as in frequency synthesizers. The 2N7000BU_T is also often used in guitar amplifiers, surge protectors and frequency dividers.
The 2N7000BU_T is a popular and versatile FET, offering a variety of applications in a wide range of devices. Its fast switching speeds make it ideal for use in digital circuit switch applications, and its high current rating allow it to handle high-power applications such as audio amplifiers and robotics. Its low input on-resistance make it perfect for sensor and radio frequency circuits.
The specific data is subject to PDF, and the above content is for reference
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