2N7000BU_T Allicdata Electronics
Allicdata Part #:

2N7000BU_T-ND

Manufacturer Part#:

2N7000BU_T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V TO92
More Detail: N-Channel 60V 200mA (Tc) 400mW (Ta) Through Hole T...
DataSheet: 2N7000BU_T datasheet2N7000BU_T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 1mA
Base Part Number: 2N7000
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 400mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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The 2N7000BU_T is a popular choice for many electronic applications, as it is a versatile Field Effect Transistor (FET). FETs allow a circuit to be switched on or off depending on the input voltage. They are commonly found in power amplifiers, oscillators, and other circuitry used in audio, video, communication and automotive electronics.

The 2N7000BU_T is a N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor), meaning it can only be switched on by an input voltage. When the input voltage is applied, it changes the electric field between the source and the drain terminals, causing a conducting channel to form. This channel forms the gate to the device, allowing current to flow from source to drain.

The 2N7000BU_T can handle 0.2A (max) of current and is rated for 20V (max). It is optimized for use in digital switching circuits, as it has an incredibly fast switching speed. It is also commonly used in audio amplifiers as well as automotive, robotics and lighting applications.

The 2N7000BU_T is able to handle up to 60V (max) at 1.5A (max) with a fast switching time, making it ideal for high-power applications. It also has an exceptionally low input on-resistance, allowing for maximum efficiency in power applications. It can also be easily combined with other components to create an integrated circuit that allows for the control of multiple devices.

In addition to its versatile use in power applications, the 2N7000BU_T is also commonly used in sensor circuits and radio frequency circuits. It is commonly used to control the input of receiving and transmitting circuits as well as in frequency synthesizers. The 2N7000BU_T is also often used in guitar amplifiers, surge protectors and frequency dividers.

The 2N7000BU_T is a popular and versatile FET, offering a variety of applications in a wide range of devices. Its fast switching speeds make it ideal for use in digital circuit switch applications, and its high current rating allow it to handle high-power applications such as audio amplifiers and robotics. Its low input on-resistance make it perfect for sensor and radio frequency circuits.

The specific data is subject to PDF, and the above content is for reference

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