2N7002K,215 Discrete Semiconductor Products |
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Allicdata Part #: | 568-4984-2-ND |
Manufacturer Part#: |
2N7002K,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 60V 340MA SOT23 |
More Detail: | N-Channel 60V 340mA (Ta) 830mW (Ta) Surface Mount ... |
DataSheet: | 2N7002K,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Power Dissipation (Max): | 830mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 40pF @ 10V |
Vgs (Max): | ±15V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 3.9 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 340mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
2N7002K,215 is a discrete MOSFET component designed for use in electronic circuits. It has two terminals – the drain and the source – and is available in small plastic D-PAK packages. The part has been designed to provide low power consumption and fast switching speed, making it suitable for use in a wide range of applications.
The 2N7002K,215 is a depletion mode MOSFET (metal-oxide-semiconductor field-effect transistor). It is normally off, meaning that when no voltage is applied to the gate, it acts as an open switch with very high impedance and does not conduct current. When a small voltage is applied to the gate, it turns on the device and current can flow from the drain to the source, even in the absence of a gate voltage.
The 2N7002K,215 is a single P-channel MOSFET, meaning it is designed to have a positive gate voltage. In other words, in order to turn on the device, a positive voltage must be applied to the gate. The device is highly linear, meaning that the current flowing between the drain and source is linearly proportional to the voltage applied to the gate. This makes the device suitable for applications where precise control over the current is required.
The 2N7002K,215 is a low power device, with a maximum drain-source voltage of 20 volts, a maximum drain current of 400 mA, and a maximum gate-source voltage of -4V. This makes it suitable for use in low voltage, low power applications. It also has a fast switching speed, with an off-state drain-source breakdown voltage of 5V and a on-state drain-current of 8A. This makes it suitable for applications requiring fast switching speeds.
The 2N7002K,215 can be used in a variety of applications. It is often used in analog circuits such as voltage regulators and switch mode power converters where its low power consumption and fast switching speed make it ideal. It is also often used in digital circuits such as logic gates, where its fast switching speed is advantageous. It is also commonly used in motor control applications, where its fast switching speed helps ensure precise control over the device.
In summary, the 2N7002K,215 is a discrete MOSFET component designed for use in a variety of applications. It has two terminals – the drain and the source – and is available in small plastic D-PAK packages. It is a depletion mode device, and is a single P-channel MOSFET, meaning it is designed to have a positive gate voltage. It is a low power device, with a maximum drain-source voltage of 20 volts, a maximum drain current of 400 mA, and a maximum gate-source voltage of -4V. Its fast switching speed makes it suitable for applications requiring fast switching speeds, such as voltage regulators, switch mode power converters, logic gates, and motor control applications.
The specific data is subject to PDF, and the above content is for reference
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