2N7053_D75Z

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	1.5A
Voltage - Collector Emitter Breakdown (Max):	100V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max):	200nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	1000 @ 1A, 5V
Power - Max:	1W
Frequency - Transition:	200MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package:	TO-226
Base Part Number:	2N7053

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

）

2N7053_D75Z Application Field and Working Principle

Transistors – Bipolar (BJT) – SingleThe 2N7053_D75Z is a single NPN digital transistor which is suitable for use in low-voltage, high-speed switching circuits, either for the amplifier or for the switching of small signal gains or losses. It is designed for use in a wide variety of integrated circuit applications and offers excellent levels of performance in such. This transistor has afixed base-collector saturation voltage drop and a low base-emitter voltage.

Applications

The 2N7053_D75Z is mainly used in many operational amplifier applications. More specifically, this transistor is suitable as a switch in low-voltage, high-speed switching fields, such as in PC motherboards, audio circuits, and signal conditioning. It is also suitable in the switching of signal gains or losses in high-frequency digital circuits. This transistor is commonly used in optoelectronic and linear applications.

Working Principle

The operating principle of the 2N7053_D75Z transistor is simple. The device basically consists of three semiconductor regions: the emitter, the base and the collector. Electrons are produced at the emitter and initiate a flow of electrons between the emitter and the collector. In order to turn the transistor on, a voltage difference between the collector and the base region is established. This voltage difference is known as the “base-emitter” voltage. The base-emitter voltage determines the flow of electrons between the two regions. When the voltage difference is high, the electrons are attracted to the base region, and when the voltage difference is low, the electrons are attracted to the collector region. The collector – emitter voltage is what determines the current that goes through the device. The current that flows through the device is known as the collector current, and is determined by the base-emitter voltage and the collector voltage. The output of the 2N7053_D75Z transistor is determined by the collector-emitter voltage. By adjusting the base-emitter voltage, the current through the transistor can be varied accordingly. As a result, the output of the transistor can be controlled. The 2N7053_D75Z is designed in such a way that it provides a linear and low-noise operation for digital signals. This is beneficial for applications such as in PC motherboards, audio circuits, and signal conditioning. With proper design, the 2N7053_D75Z provides excellent levels of performance and reliability.

Conclusion

In conclusion, the 2N7053_D75Z is a single NPN digital transistor which is suitable for use in low-voltage, high-speed switching circuits. It is designed to provide excellent performance and reliability in many operational amplifier applications. The working principle of the 2N7053_D75Z transistor is based on the three semiconductor regions of the device, which determines the current that passes through the transistor. With proper design, the 2N7053_D75Z provides good levels of performance in various applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description