2N7002PS/ZLH Allicdata Electronics
Allicdata Part #:

2N7002PS/ZLH-ND

Manufacturer Part#:

2N7002PS/ZLH

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET 2 N-CH 60V 320MA SOT363
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 320mA (Ta) 990...
DataSheet: 2N7002PS/ZLH datasheet2N7002PS/ZLH Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Power - Max: 990mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Description

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2N7002PS/ZLH application field and working principle belong to transistors, specifically field-effect transistors (FETs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Array is a component of transistors. It is constructed by connecting several components in a linear manner.

2N7002PS/ZLH, a component of transistors, is a dual N-channel enhancement transistor manufactured in logic level enhancement mode, which is especially designed for use in load and line switching. With the adoption of low-voltage, wide- and low-power drive and logic level enhancement gate, it offers a low on-state resistance and maximum sustained repetitive peak OFF-state current.

The working principle of 2N7002PS/ZLH is that when the gate voltage meets or exceeds the threshold voltage, the strong insulation layer on the surface of the semiconductor, which is caused by the large electric field in the field effect, is broken and a current path is generated in the N-channel of the MOSFET, thereby allowing the MOSFET to conduct, which is called "channel open". Conversely, when the gate voltage is lower than the threshold voltage, the current path in the N-channel of the MOSFET is broken, thereby inhibiting the current, which is called "channel turn off". This means that the MOSFET acts as an ON-OFF switch that can be opened and closed by the voltage at the gate end.

The application field of 2N7002PS/ZLH are mainly related to use in load and line switching. In view of its wide range of operating voltage and low levels of power drive, it can be used in many areas, such as the production of switches and switching electronic circuits, electronic amplifiers, electronic anti-theft devices, etc. More specific types of its application areas include, but are not limited to, low-power switching applications, low-cost digital logic circuits and analog circuits, digital circuits such as computers and emulators, interface components for transforming information signals between digital and analog systems, R&D applications of integrated circuit manufacturing and testing, and hybrid and multifunctional circuit design.

In conclusion, 2N7002PS/ZLH working principle and application should be categorized into transistors, specifically field-effect transistors (FETs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), and arrays. It has a wide range of applications, including the production of switches and switching electronic circuits, electronic amplifiers, and electronic anti-theft devices. Its low-voltage, wide- and low-power drive and logic level enhancement gate make it a sought-after component for many electronics projects.

The specific data is subject to PDF, and the above content is for reference

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