2N7002AQ-7 Allicdata Electronics
Allicdata Part #:

2N7002AQ-7DITR-ND

Manufacturer Part#:

2N7002AQ-7

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET NCH 60V 180MA SOT23
More Detail: N-Channel 60V 180mA (Ta) 370mW (Ta) Surface Mount ...
DataSheet: 2N7002AQ-7 datasheet2N7002AQ-7 Datasheet/PDF
Quantity: 1000
1 +: $ 0.02400
10 +: $ 0.02328
100 +: $ 0.02280
1000 +: $ 0.02232
10000 +: $ 0.02160
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 370mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Vgs (Max): ±20V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 5 Ohm @ 115mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The 2N7002AQ-7 is a N-Channel MOSFET that is suitable for both digital and analog electronic applications. It has a low on resistance of 70 mOhms, a Vds range of 1.8 to 20 V, a Vgs range of -10 to -25 V and a pair of transistors with two gates (N-type and P-type).

It is currently one of the most commonly used MOSFETs in the field of power electronics and analog/digital switching. It is widely used as a switch for high side engaging, load and gate driver switch in voltage regulator circuits, relay drivers, audio and motor controllers, interface modules, and many more.

The 2N7002AQ-7 has two operating modes for gate control. The first is the enhancement mode (E-Mode), in which the drain current starts flowing when the gate voltage (Vgs) is greater than the threshold voltage (Vth). The second is the depletion mode (D-Mode), in which the drain current stops flowing when the gate voltage (Vgs) is equal to or less than the threshold voltage (Vth).

The working principle of the 2N7002AQ-7 can be explained using the MOSFET structure. The 2N7002AQ-7 is an asymmetrical transistor, which means that it is composed of three layers instead of two. The three layers are the drain, substrate, and gate. The two transistors inside the FET are N-Channel MOSFETs and the P-Channel MOSFETs.

In the E-Mode, there is a depletion region formed on the side of the substrate opposite the gate. This causes a charge to build up and the electrons start to flow from the source to the drain. The current flow is controlled by the voltage applied to the gate. As the voltage increases, the current increases exponentially in the E-Mode.

In the D-Mode, there is an accumulation region formed on the side of the substrate opposite the gate. This creates a barrier to current flow and the electrons cannot flow from the source to the drain. The current flow is initially limited by the voltage applied to the gate and decreases only when the voltage applied to the gate decreases.

The 2N7002AQ-7 MOSFET is a great choice for a number of different applications due to its low on resistance, wide operating temperature range, and its ability to work in both enhancement mode and depletion mode.

It is a useful device in power electronics, analog / digital switching, load and gate driver switch in voltage regulator circuits, relay drivers, audio and motor controllers, interface modules, as well as other applications. Its ability to switch signals quickly makes it a great choice for applications that require fast switching times.

The specific data is subject to PDF, and the above content is for reference

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