2N7000-D74Z Allicdata Electronics

2N7000-D74Z Discrete Semiconductor Products

Allicdata Part #:

2N7000-D74ZTB-ND

Manufacturer Part#:

2N7000-D74Z

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 200MA TO-92
More Detail: N-Channel 60V 200mA (Ta) 400mW (Ta) Through Hole T...
DataSheet: 2N7000-D74Z datasheet2N7000-D74Z Datasheet/PDF
Quantity: 6000
2000 +: $ 0.04999
Stock 6000Can Ship Immediately
$ 0.06
Specifications
Vgs(th) (Max) @ Id: 3V @ 1mA
Base Part Number: 2N7000
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 400mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Box (TB) 
Description

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The 2N7000-D74Z is a type of junction field-effect transistor (JFET), which belongs to the single-type MOSFET category. It is designed to operate as a bipolar junction transistor (BJT) replacement when high-frequency conditions are present and/or greater speed is required. This type of BJT does not have a gate terminal similar to other FETs and MOSFETs. Instead, the junction at the drain and source serves as the gate. This feature makes the 2N7000-D74Z ideal for many applications in which Bipolar transistors fail to perform due to their speed limitations.

The 2N7000-D74Z has two regions of operation in which it will function optimally, the linear and saturation regions. When the device is in the linear region, its internal characteristics are the same as a BJT. In this region, the voltage at its gate will affect the current that flows between its source and drain terminals proportional to the rate at which it changes. The source current (ID) is directly related to the gate-source voltage (VGS). This linear region can favorably be used in linear amplifiers and as analog signal processing. Conditions stretching beyond the linear region takes us to the second region referred to as saturation region in which the transistor will transition from active to cutoff modes. In this region, current gain and voltage gain are significantly reduced if not practically zero. This region can be put to use in switching applications for high-frequency systems.

The 2N7000-D74Z has typically been used in audio frequency applications due to its low cost and in high-speed logic application due to its relatively high electrical performance. It is used in high frequency/high gain amplifiers, switching applications, audio line amplifiers, smart metering, telecommunication systems, and other analog signal processing applications.

The 2N7000-D74Z has many advantages that come along with it. It is a versatile device well suited for use in many high-speed digital logic systems. It has very low input drive current requirements and can readily handle very high signal frequencies. Furthermore, its low-level output voltage is quite stable, due to its transistors being individually matched. The low noise it produces also makes it ideal for use in many audio frequency applications where noise minimization is desired.

Another advantage of the 2N7000-D74Z is its wide range of operating temperatures that can range from −55 to +125°C. This versatility provides great protection against environmental factors such as thermal and over voltage conditions. Furthermore, the device has extremely low on-resistance. This is beneficial for applications requiring very high currents.

In conclusion, the 2N7000-D74Z is a sophisticated and highly useful device. Its characteristics make it ideal for use in many high-frequency applications where its linear and saturation regions can be readily used in many audio and logic systems. Additionally, its wide temperature range and low resistance makes it resistant to environment fluctuations and various kinds of overvoltage, thus ensuring its robustness. Finally, its low noise component makes it an ideal choice when minimizing noise is desired.

The specific data is subject to PDF, and the above content is for reference

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