2N7002F,215 Discrete Semiconductor Products |
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Allicdata Part #: | 568-5983-2-ND |
Manufacturer Part#: |
2N7002F,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 60V 475MA SOT23 |
More Detail: | N-Channel 60V 475mA (Ta) 830mW (Ta) Surface Mount ... |
DataSheet: | 2N7002F,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 830mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 10V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 0.69nC @ 10V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 475mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The 2N7002F,215 is a high performance, low voltage, N-Channel Enhancement-mode, field effect transistor. It is a FET (Field-effect transistor) that is made up of four basic elements: the gate, source, drain, and channel. The 2N7002F,215 is specifically designed to operate in low-voltage environments with a maximum Voltage rating of 5V, making it a popular choice for sensors and power management applications.
The 2N7002F,215 is a single transistor, meaning it is composed of one silicon wafer, separated by two separate doping regions. When voltage is applied, it opens, completing the circuit and allowing current to flow. The transistor is able to switch signals from the logic states to their logical values because of current gain, created by the depletion layer, which is the region that separates the source and drain.
The 2N7002F,215 is a highly useful device for many applications. It is used in small logic circuits as a switching element, often used as a digital logic gate. It can also be used in current-limiting or switching applications, or as a voltage amplifier for power amplification.
The 2N7002F,215 is also utilized in low current sensing applications. It is designed to sense low voltage signals and transfer them to the greater circuit system. This process helps to improve the accuracy of the overall system. It is also used in battery circuits where it serves as a protection device, ensuring that too much current does not flow through the circuit.
The 2N7002F,215 is also an extremely reliable device. It is designed to handle temperature extremes and sudden increases in current without failure. It is considered to be a low-cost transistor and is well-suited for use in industrial, automotive, and aerospace applications.
The 2N7002F,215 is an exceptionally useful device for any range of applications. It provides excellent protection against voltage and current overload, making it a reliable choice for projects that require precise control over voltage levels. Its ability to sense low voltage signals and transfer them to the greater circuit system puts it in a unique class that is ideal for current limiting and switching applications. As a result, it is ideally suited for industrial, automotive, and aerospace applications. Overall, the 2N7002F,215 is an invaluable transistor with a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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