
Allicdata Part #: | 2N7008-G-ND |
Manufacturer Part#: |
2N7008-G |
Price: | $ 0.36 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET N-CH 60V 0.23A TO92-3 |
More Detail: | N-Channel 60V 230mA (Tj) 1W (Tc) Through Hole TO-9... |
DataSheet: | ![]() |
Quantity: | 1732 |
1 +: | $ 0.32760 |
25 +: | $ 0.27266 |
100 +: | $ 0.24658 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
Vgs (Max): | ±30V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7.5 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 230mA (Tj) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Bulk |
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The 2N7008-G is a single, N-Channel MOSFET (metal-oxide semiconductor field-effect transistor) manufactured by STMicroelectronics. It is one of the most commonly used MOSFETs in consumer electronics, due to its low on-state resistance, low gate-capacitance, and low power consumption. The 2N7008-G is also suitable for applications in low-on-state resistance, low gate capacitance, and high reliability.
The 2N7008-G is designed for use in voltage platforms ranging up to 30V and a wide temperature range of between -55°C and +150°C. Its maximum continuous drain current is 0.8A, while its total gate charge is only 5.3nC, at a low gate-to-source voltage of 5V. This low gate charge and low gate-to-source voltage make it ideal for applications where gate voltage is a critical consideration.
In terms of operation, the 2N7008-G has an equivalent load line of 30 W, when used in an environment where the channel temperature is 25°C. This value increases with an increase in temperature, reaching an equivalent load line of 50 W at 150°C. Furthermore, the 2N7008-G has a low reverse body leakage current, with a maximum value of 1 µA when operating at 5V.
In terms of applications, the 2N7008-G can be used in a wide array of fields, such as automotive, computing, communication and industrial automation. It is also suitable for DC-DC converters and motor control systems. Furthermore, it can be used in battery-operated devices, such as portable radios and cellular phones, thanks to its low power consumption. Lastly, it can be used in USB controllers and audio amplifiers, due to its high performance.
To summarize, the 2N7008-G is a versatile single N-Channel MOSFET manufactured by STMicroelectronics. It is suitable for use in a wide array of voltage platforms, and its low power consumption makes it ideal for battery-operated devices. It also has a low gate charge and low gate-to-source voltage, making it suitable for applications where gate voltage is a critical consideration. Lastly, it can be used in automotive, computing, communication, industrial automation, DC-DC converters and motor control systems, as well as USB controllers and audio amplifiers.
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