2N7002K Allicdata Electronics

2N7002K Discrete Semiconductor Products

Allicdata Part #:

2N7002KTR-ND

Manufacturer Part#:

2N7002K

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 300MA SOT23
More Detail: N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount ...
DataSheet: 2N7002K datasheet2N7002K Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23 (TO-236AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 350mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The 2N7002K is a N-channel enhancement field-effect transistor (FET) that is made from the silicon material. This component is well-suited for applications that are high-side switching voltage loads such as various types of switching converters, automotive systems, power modules, and load switches. It may also be used for controlling higher current DC loads.The 2N7002K contains one N-channel transistor that is connected to the drain and source pins. The gate is the controlling electrode, and it is interfaced with the external circuitry. This component has an on-resistance of 1.1 ohms and an off-resistance of 70K ohms. It has an operating temperature range of -65 degrees C to +150 degrees C, with a max breakdown voltage of 40V.The 2N7002K is also known as a 3-terminal device. The gate terminal is the controlling electrode, which is connected to the external circuitry. The drain and source terminals are connected to the N-channel transistor, and they determine the conducting and blocking states of the component.The working principle of the 2N7002K is based on the behavior of charged carriers in an insulated gate. When the gate voltage is 0V, the N-channel transistor will be ‘off’. This means that there is a large amount of resistance between the drain and source terminals. When a positive voltage is applied to the gate, the resistance between the drain and source terminals decreases. This allows current to flow from the drain to the source, and the component will be ‘on’.The 2N7002K can be used in various applications, such as switches and converters. It is a suitable component for high side switching, as it can handle higher voltage loads with minimal power loss and easier gate control. It is also used in automotive systems and power modules, as well as load switches.Overall, the 2N7002K is a versatile component that is suitable for many types of applications. It has a low on-resistance, an acceptable max breakdown voltage, and a wide operating temperature range. It is well-suited for high-side switching and controlling higher current DC loads, which can be beneficial for various types of applications.

The specific data is subject to PDF, and the above content is for reference

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