2SK1058-E Allicdata Electronics
Allicdata Part #:

2SK1058-E-ND

Manufacturer Part#:

2SK1058-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 160V 7A TO-3P
More Detail: N-Channel 160V 7A (Ta) 100W (Tc) Through Hole TO-3...
DataSheet: 2SK1058-E datasheet2SK1058-E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 100W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Vgs (Max): ±15V
Series: --
Rds On (Max) @ Id, Vgs: --
Drive Voltage (Max Rds On, Min Rds On): --
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drain to Source Voltage (Vdss): 160V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The 2SK1058-E is a N-channel silicon power MOSFET that is designed to handle over 100 watts of power. It is available in a TO-3 package and is widely used as a power switch in high power applications such as power converters, high voltage switching, and high frequency switching.

This kind of power MOSFET operates by using an insulated gate to control the current flow between the source and the drain terminals. In a MOSFET, the current flows from the source to the drain when the gate is held at a positive voltage with respect to the source and drain. When the gate voltage is brought to a level below the source voltage, the device is said to be in the “off” state, and no current flows.

The 2SK1058-E has a drain-source breakdown voltage of 900V, a maximum drain current of 110A, and a maximum power dissipation of 100W. It also has a maximum operating temperature of 175°C.

The 2SK1058-E is a versatile MOSFET that can be used in applications ranging from motor control, DC-DC conversion, and lighting control. The device is particularly suitable for applications where high power ratings are required, but low gate drive voltage is desired.

The 2SK1058-E can also be used in high-current switching applications where its low on-resistance, fast switching speed, and wide operating range make it an ideal choice.The device is also well-suited for automotive systems and robotics due to its high reliability and wide temperature range.

In conclusion, the 2SK1058-E is an important part of any robust power management system. It is reliable, efficient, and can be easily tailored to a wide range of applications. Its combination of low on-resistance, low gate drive voltage, and high power ratings makes it an ideal choice when high power is required in a small package.

The specific data is subject to PDF, and the above content is for reference

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