2SK1859-E

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The 2SK1859-E is a Logic Level N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed to be used in high-speed, low-power logic circuits. Its low RDS(On) (drain-to-source resistance) and low threshold voltage ensure that it can be effectively utilized in applications requiring high switching speed, small power consumption, and low heat dissipation. The device is further engineered with an adjustable gate threshold voltage, meaning that its voltage performance can be tailored to the specific needs of various applications.

In terms of its application field, the 2SK1859-E is well suited for any application that requires a small, low-power MOSFET. While its primary purpose is to be used as a logic level drive transistor, the 2SK1859-E is an ideal choice for use in many other applications, such as low-attenuation circuits and TTL level driver circuits. It is also suitable for use in voltage converters, motor controls, and for forming complementary circuits with other transistors. Additionally, its small size allows for its integration in small applications, such as portable electronics.

The 2SK1859-E works according to the principle of a MOSFET: when an electric charge is applied to the gate, a high-field electrical force is established between the source and drain. This in turn controls the conductivity of the channel between the source and drain, allowing current to flow by varying the voltage. The voltage value required to establish the electrical force is determined by the gate threshold voltage of the MOSFET. As the 2SK1859-E has an adjustable gate threshold voltage, it can be easily adapted to the specific needs of different applications.

In summary, the 2SK1859-E is a versatile, low-power Logic Level N-Channel MOSFET ideal for use in a wide range of high-speed, low-power logic circuits. Thanks to its adjustable gate threshold voltage and small size, it is especially well suited for low-attenuation and TTL level driver circuits, voltage converters, motor controls, and for forming complementary circuits with other transistors. Additionally, its small size allows for its integration in small applications, such as portable electronics.

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