Allicdata Part #: | 2SK1340-E-ND |
Manufacturer Part#: |
2SK1340-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 900V 5A TO-3P |
More Detail: | N-Channel 900V 5A (Ta) 100W (Tc) Through Hole TO-3... |
DataSheet: | 2SK1340-E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 740pF @ 10V |
Vgs (Max): | ±30V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4 Ohm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The 2SK1340-E is a field effect transistor (FET), especially a metal-oxide semiconductor field effect transistor (MOSFET) which is one of the main types of field effect transistors. It is a single-channel FET with drain (D), source (S) and gate (G) electrodes. The 2SK1340-E is sometimes referred to as an enhancement mode FET because it requires a positive signal on the gate in order to turn it on. As a single-channel FET, it is often used in switching applications as well as in amplifying and signal processing.
In terms of application fields, the 2SK1340-E is most often used in power switching, signal processing, control circuit applications, and other common applications which require a single CHANNEL FET device. It is often used in batteries and other portable applications that require low-power operation. In addition, it is sometimes used in automotive electronics due to its high-temperature operating range. The 2SK1340-E is also often used in audio circuits for amplifiers, crossover networks, and other signal processing applications.
In terms of working principle, when a positive potential is applied to the gate electrode, the electric field generated by the gate pulls the mobile charge carriers (electrons or holes) in the channel to the gate, resulting in channel formation. This in turn reduces the resistance between the drain and source and thus allowing the current to pass between them, thus opening the channel and allowing the 2SK1340-E to turn on. Conversely, when a negative potential is applied to the gate electrode, the electric field generated by the gate pushes the mobile charge carriers away from the gate and thus reducing the conduction between the drain and source, thus closing the channel and turning the 2SK1340-E off.
The 2SK1340-E is a versatile device, and can be used in a wide variety of applications. It is particularly useful when high switching speed is needed, and also when very low drain-source leakage current is necessary. It is capable of providing very high frequency performance, fast switching speed, high conductance, and low-power operation. Due to its flexibility, the 2SK1340-E can be used in a wide range of devices, from power supplies to amplifiers and signal processing.
The specific data is subject to PDF, and the above content is for reference
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