2SK1119(F) Allicdata Electronics
Allicdata Part #:

2SK1119(F)-ND

Manufacturer Part#:

2SK1119(F)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 1000V 4A TO-220AB
More Detail: N-Channel 1000V 4A (Ta) 100W (Tc) Through Hole TO-...
DataSheet: 2SK1119(F) datasheet2SK1119(F) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 100W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The 2SK1119(F) is a type of field effect transistor (FET) classified as single. It is a MOSFET transistor with a variety of uses in electronic circuits. FETs are voltage-controlled devices that act as semiconductor switches and amplifiers in integrated circuits. They are commonly used within motor, lighting, audio, and display applications due to their high input impedance, fast switching speed, low power consumption and small size.

The 2SK1119(F) is a N-channel enhancement-mode transistor, which means that in order to turn it on, it must be supplied with a positive voltage on the gate terminal. This voltage acts like a gate that controls the flow of electrons from the source to the drain. The 2SK1119(F) also has a high input impedance, which essentially means that it does not require a lot of power to control the current flow in an electronic circuit.

The 2SK1119(F) can be found in a variety of electronics applications, including audio amplifying, current switching, battery charging, radio frequency amplifying, and display and lighting applications. In audio amplifying applications, the 2SK1119(F) can be used as an audio output transistor for amplifying sound signals from audio sources such as music players and TVs. Additionally, the transistor can be used to switch and regulate the current flow from the battery to the electronic device.

The FET\'s high input impedance also makes it an ideal switch for current regulation and radio frequency amplifying applications. In current regulation, the transistor can be used to control the input current of the device and to set the voltage at which it begins to regulate it. Additionally, the transistor can also be used to amplify radio frequencies (such as FM, AM, and television signals) so that they can be received by antennas.

Lastly, the 2SK1119(F) can also be used in display and lighting applications. In these applications, the transistor can be used to control the intensity and color of individual pixels in a display, or to control the brightness of a light source. This is accomplished by adjusting the voltage applied to the gate, which in turn adjusts the current flowing through the transistor.

In conclusion, the 2SK1119(F) is a versatile FET transistor with applications in audio amplification, current switching, battery charging, radio frequency amplifying, and display and lighting applications. It is a N-channel enhancement-mode transistor and has a high input impedance, making it ideal for controlling the flow of current in an electronic circuit. Additionally, the transistor has fast switching speeds and low power consumption, making it suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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