2SK1317-E

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2SK1317-E is a single-gate depletion-mode insulated-gate field-effect transistor (IGFET) that has become popular for a number of applications in the electronics industry. According to manufacturer Toshiba, the 2SK1317-E has a wide range of uses in audio amplifiers, low-frequency oscillators and other circuits that require high gain and low distortion.

The 2SK1317-E, employed in a variety of technical capacities, is an ideal choice for a wide array of applications. Its many advantages include high input and output impedance, extremely low noise, and excellent linearity. Additionally, the 2SK1317-E has a fast switching speed, making it suitable for switching applications. Another benefit of this single-gate field-effect transistor is its low gate capacitances, which enable lower device capacitances and faster switching speeds.

The working principle of the 2SK1317-E is a typical one for any modern field-effect transistor (FET). Five terminals are included in the device; the drain, gate, and source are the main components. Unlike the family of bipolar junction transistors ( BJTs ), the 2SK1317-E only requires very small gate voltages to turn it on and off. The 2SK1317-E is a voltage-controlled type of device, meaning the output of the device is dictated by the gate voltage.

In terms of operation, the gate and drain terminals are held at a constant potential difference, while a current flows between the source and drain terminals. By changing the voltage of the gate, the current between the source and drain terminals can be altered. This system is used to control the flow of electricity and is referred to as field effect control.

The 2SK1317-E has several advantages and disadvantages. One benefit of this device is its high input and output impedance, which eliminate the need for an amplifier in some applications and can reduce power consumption compared to using a BJT as an amplifier. The device also has low noise levels, which reduces interference and provides superior fidelity. Additionally, since the 2SK1317-E is a voltage-controlled device, it works better than a BJT in complex switching circuits.

The downside of the 2SK1317-E is its limited power handling capacity. It is not well suited for large currents and does not dissipate as much power as a BJT. Additionally, the device is limited in its operating frequency range, especially compared to other FETs. Lastly, the 2SK1317-E has comparatively lower isolation levels, meaning there is potential for some crosstalk if used in certain applications.

In conclusion, the 2SK1317-E is an ideal choice for a wide array of applications due to its many advantages, such as high input and output impedance, extremely low noise, and excellent linearity. However, it is limited in terms of power handling and operating frequency range, and also has comparably lower isolation levels which could lead to crosstalk. It is best used in audio amplifiers, low-frequency oscillators and other circuits that require high gain and low distortion, and can be useful in switching applications due to its fast switching speed.

The specific data is subject to PDF, and the above content is for reference