2SK1518-E Allicdata Electronics
Allicdata Part #:

2SK1518-E-ND

Manufacturer Part#:

2SK1518-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 500V 20A TO3P
More Detail: N-Channel 500V 20A (Ta) 120W (Tc) Through Hole TO-...
DataSheet: 2SK1518-E datasheet2SK1518-E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 270 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: --
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 10V
FET Feature: --
Power Dissipation (Max): 120W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3
Description

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The 2SK1518-E is a source-connected N-channel junction type field effect transistor (FET). It is a one of the most popular single FETs out on the market today, and is produced by the Japanese manufacturer Mitsubishi Electric Corporation. It is a silicon FET, which means it acts like a switch in electronic circuits. In this article, we will discuss the 2SK1518-E’s application field and its working principle.

Application Field of the 2SK1518-E

The 2SK1518-E is highly efficient due to its low power consumption rate and its high switching speed. As a result, it is mainly used in high frequency amplifiers, oscillators, and power amplifiers. Because it has a high input impedance and a low output impedance, it is able to accurately amplify a low level signal while offering low level sound quality. It is also used in electronic circuits where a high impedance is not needed, such as in relay drivers, waveform generators, and pulse shapers.

Working Principle of the 2SK1518-E

The 2SK1518-E is a N-channel FET which means it operates by applying a voltage to its gate in order to create a channel between its source and drain. This channel is normally off until a voltage is applied to the gate, which will open the channel, allowing current to flow from the source to the drain. The 2SK1518-E is unlike other FETs because it is source-connected, meaning there is no separate connection point connected to the source.

The 2SK1518-E’s source is connected directly to the gate, which provides much higher input impedance and lower output impedance than that of a source-drain connected FET. When a voltage is applied to the gate, current will flow from the source to the drain, passing through the “on” state channel. The higher the voltage applied to the gate, the larger the current will flow.

The 2SK1518-E has a high breakdown voltage, which is the maximum voltage that can be applied to the gate without damaging the device. This makes it suitable for use in applications with high voltages, such as switching power supplies. The 2SK1518-E is also able to operate at a wide temperature range, from -40°C to +125°C.

Conclusion

The 2SK1518-E is a popular source-connected N-channel junction type FET that is used mainly in high frequency amplifiers, oscillators, and power amplifiers. Its low power consumption and high switching speeds make it ideal for these applications. It also has a high input impedance and a low output impedance, making it suitable for use in electronic circuits where a high impedance is not needed. Lastly, its high breakdown voltage and wide operating temperature range make it suitable for applications involving high voltages and extreme temperatures.

The specific data is subject to PDF, and the above content is for reference

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