Allicdata Part #: | 2SK1342-E-ND |
Manufacturer Part#: |
2SK1342-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 900V 6A TO-3P |
More Detail: | N-Channel 900V 8A (Ta) 100W (Tc) Through Hole TO-3... |
DataSheet: | 2SK1342-E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 900V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 4A, 10V |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1730pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 100W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-3P |
Package / Case: | TO-3P-3, SC-65-3 |
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The 2SK1342-E is a type of Field Effect Transistor (FET) often referred to as a MOSFET. A MOSFET is a voltage-controlled device and is part of a larger class of devices known as Field Effect Transistors (FETs). The term FET encompasses a diverse family of transistors, including bipolar transistors. As a MOSFET, the 2SK1342-E is an unipolar type of transistor, and specifically belongs to a sub-classification known as single transistors.
A MOSFET is an insulated-gate field-effect transistor, with a gate that is insulated from the channel. This means that a small electric field can be used to control the conductivity of the device. Unlike other FETs, MOSFETs don\'t require a physical connection between their gate and the channel to regulate their current flow. This makes them very popular in digital circuits, as the ability to quickly switch on and off is essential for the correct processing of digital signals.
The 2SK1342-E is a MOSFET designed for monitor and television applications, such as vertical and horizontal deflection drive circuits. It is designed for low power consumption and has a very low typical output capacitance of less than 0.7 pF. The MOSFET has a low trench gate structure that provides good breakdown voltage and low leakage current. Additionally, the 2SK1342-E is designed to be particularly resistant to ESD (electrostatic discharge) and can comfortably withstand up to 6000V of ESD.
The 2SK1342-E works on the basic principle of FETs. A small change in voltage on the gate electrode is amplified to produce a much larger change in voltage across the drain-source terminals. This gate voltage controls the voltage between the two electrodes such that a change in the gate voltage will cause a change in the drain-source voltage. This makes the device particularly well-suited to applications where a precise control of current is required.
The 2SK1342-E can be used in a variety of applications, from digital logic circuits to high-definition TVs and monitors. The device is an ideal choice for applications where precise control of current is required, as well as for applications where ESD protection is needed. The device also excels in low power consumption applications and has a very low output capacitance, making it ideal for use in sensitive applications such as low noise amplifiers.
The 2SK1342-E is a versatile MOSFET designed for use in a variety of applications. Its low power consumption and low capacitance make it ideal for low noise applications, while its ESD protection make it an excellent choice for applications requiring a robust level of protection against ESD. As a MOSFET, it provides precise control of current and voltage and is suitable for a wide range of applications, ranging from digital logic to high-definition TVs and monitors.
The specific data is subject to PDF, and the above content is for reference
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