Allicdata Part #: | 2SK1775-E-ND |
Manufacturer Part#: |
2SK1775-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 900V 8A TO-3P |
More Detail: | N-Channel 900V 8A (Ta) 60W (Tc) Through Hole TO-3P |
DataSheet: | 2SK1775-E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1730pF @ 10V |
Vgs (Max): | ±30V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Ta) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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2SK1775-E is a device that belongs to the category of field effect transistors (FETs) and was developed by Toshiba, a global leader in the semiconductor industry. It is an enhancement-mode device, meaning that it can only be turned on, or activated, through the application of a controlling signal. This transistor is a single-channel type, meaning that it is able to control the current flow through a single channel.
The 2SK1775-E is a member of the “MOSFET” family, which stands for metal-oxide-semiconductor field effect transistor. This is a type of transistor that uses two insulated metal oxide layers on a silicon substrate to form a “gate” between two electrodes. This gate acts as a switch, allowing the control signal to switch the current flow through the device on and off.
Due to its enhanced-mode switch operation, the 2SK1775-E is often used for switching in power systems and other power control applications. It is also used in audio amplifiers where it can be used to switch audio signals on and off as well as providing useful signal gain. Some other potential applications include radio frequency amplifiers, oscillator circuits, and high speed switching circuits.
The working principle of the 2SK1775-E is relatively simple. The problem circuit is connected to the gate and drain of the device. When the gate voltage is either positive or negative, electricity will begin to flow between the gate and the drain. The current flow is controlled by the gate voltage, which means that it can be “switched” on and off depending on the level of the gate voltage.
The 2SK1775-E is a power switch with excellent performance due to its low on-resistance, high speed, and low power consumption. It has been used in a wide range of power systems where it has proven to be a reliable and efficient switching device. It is also suitable for use in audio amplifiers, radio frequency amplifiers, oscillator circuits, and high speed switching circuits.
The 2SK1775-E is a useful and powerful access control device, but like all semiconductor devices, it must be used with caution. The device should only be used with a properly designed circuit, and if there is any doubt, an appropriate heat sink should be used to protect the device from overheating and damage.
In summary, the 2SK1775-E is an enhancement-mode MOSFET transistor that is primarily used for power switching and other power control applications. It is also used in some audio and radio frequency applications due to its low on-resistance and high speed switching capabilities. The device must be used with a properly designed circuit to prevent any damage that could occur due to overheating or incorrect application.
The specific data is subject to PDF, and the above content is for reference
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