
2SK1829TE85LF Discrete Semiconductor Products |
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Allicdata Part #: | 2SK1829TE85LFTR-ND |
Manufacturer Part#: |
2SK1829TE85LF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 20V 0.05A USM |
More Detail: | N-Channel 20V 50mA (Ta) 100mW (Ta) Surface Mount S... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 100mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5.5pF @ 3V |
Vgs (Max): | 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 40 Ohm @ 10mA, 2.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V |
Current - Continuous Drain (Id) @ 25°C: | 50mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Transistors are small semiconductor devices that are used to control the flow of electrons. The 2SK1829TE85LF is a type of transistor known as a field-effect transistor (FET). FETs are used primarily in digital circuits, but they are also suitable for analog circuits as well. FETs come in two varieties: Junction Field-Effect Transistors (JFETs) and Metal-Oxide Semiconductor Field-Effect Transistors (MOSFETs). The 2SK1829TE85LF is a MOSFET, which is a single device.
The 2SK1829TE85LF has a wide range of applications in electronic circuits, including but not limited to audio amplifiers, pulse generators, motor drive circuits, power supplies, digital-to-analog and analog-to-digital converters, and high-frequency switching circuits. The device is particularly well suited for high-power applications, with a maximum drain-source voltage of 30V, a maximum drain current of 120A, and a maximum junction temperature of 175°C.
The 2SK1829TE85LF is an N-channel device. The source and drain terminals are connected to the source material, which is usually an N-doped semiconductor. The gate terminal is connected to the control material, which is usually a P-doped semiconductor. When a positive voltage is applied to the gate terminal, electrons in the N-doped semiconductor are attracted to the gate terminal and form a conducting channel between the source and drain terminals. This allows current to flow between the source and drain, and makes the transistor act like a switch.
In the "off" state, the channel is not formed and current cannot flow between the source and the drain. This makes the transistor act like an open switch. In this state, the transistor consumes almost no power, making it very power-efficient. Additionally, the voltage drop across the switch (i.e. the gate-source voltage) is almost negligible, so it does not affect performance.
When the transistor is switched on, the gate-source voltage determines the current flow between the source and drain terminals. This allows the current between the terminals to be precisely controlled, making the transistor very useful in many applications. The device also has a high input impedance, making it suitable for use in high-impedance circuits.
The 2SK1829TE85LF is a versatile and reliable device, with a wide range of applications in both digital and analog circuits. Its high drain current and low gate-source voltage make it well suited for high-power applications, while its high input impedance makes it perfect for high-impedance circuits. The device is a reliable and cost-effective solution for many electronic applications.
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