2SK1339-E

The 2SK1339-E is a field-effect transistor (FET). Specifically, it is a single enhancement-mode (normally-off) MOSFET. FETs are commonly used in electronic circuits due to their low input impedance and fast switching. The 2SK1339-E is a high-voltage device typically used in applications such as motor drives, inverters, and lighting switching, where high voltages are typically encountered.The 2SK1339-E utilizes a three-terminal design. It has a source, gate, and drain terminals. The gate controls the flow of current from the source to the drain. Applying a positive voltage to the gate terminal increases the conductivity of the channel, allowing a current to flow from the source to the drain. Applying a negative voltage to the gate reduces the conductivity of the channel, blocking any current that may try to flow from the source to the drain.The 2SK1339-E is a high-voltage MOSFET. It is designed to handle voltages up to 1000V. It is important to note that the gate terminal must be operated with a much lower voltage than the source/drain terminals. The gate voltage should not exceed 30 volts as they may cause permanent damage to the device.When selecting a 2SK1339-E, it is important to consider its application. If the device is used for motor drives or other high-voltage applications, the 2SK1339-E should be chosen as it is designed to handle high voltage. Additionally, the maximum allowed current should be taken into account. The 2SK1339-E has a maximum continuous drain current of 110 Amps or a peak surge current of 160 Amps. The device should be chosen based on the expected current draw of the application.In order to ensure proper orientation and installation, it is important to ensure that the device is soldered onto a copper trace on a printed circuit board with the source terminal on the left and the drain terminal on the right. Additionally, when soldering the device, it is important to ensure that the device is not exposed to any mechanical or thermal stress as it may cause damage.The 2SK1339-E is a high-voltage device and it should be handled with care. It is important to store the device in its original packaging and to not expose it to any excessive temperatures, humidity, or radiation. Additionally, ESD (electrostatic discharge) should be avoided, as it could potentially damage the 2SK1339-E.In summary, the 2SK1339-E is a field-effect transistor designed for applications such as motor drives, inverters, and lighting switching. It has a source, gate, and drain terminals and it is designed to handle voltages up to 1000V. It is important to properly orient and install the device and to ensure that it is not exposed to any mechanical or thermal stresses. Additionally, it is important to handle the device with care and to avoid any ESD.

2SK1339-E	Renesas Elec...	0.0 $	1000	MOSFET N-CH 900V 3A TO-3P...
2SK11030QL	Panasonic El...	0.12 $	3000	JFET N-CH 20MA 150MW MINI...
2SK1835-E	Renesas Elec...	--	1000	MOSFET N-CH 1500V 4A TO-3...
2SK1374G0L	Panasonic El...	0.0 $	1000	MOSFET N-CH 50V .05A SMIN...
2SK1859-E	Renesas Elec...	--	1000	MOSFET N-CH 900V 6A TO-3P...
2SK122800L	Panasonic El...	0.0 $	1000	MOSFET N-CH 50V 50MA MINI...
2SK1828TE85LF	Toshiba Semi...	0.06 $	30000	MOSFET N-CH 20V 50MA S-MI...
2SK1317-E	Renesas Elec...	--	1000	MOSFET N-CH 1500V 2.5A TO...
2SK1518-E	Renesas Elec...	--	1000	MOSFET N-CH 500V 20A TO3P...
CA06EA14S-2SK10	ITT Cannon, ...	0.0 $	1000	ER 4C 4#16S SKT PLUG
2SK1340-E	Renesas Elec...	0.0 $	1000	MOSFET N-CH 900V 5A TO-3P...
2SK1119(F)	Toshiba Semi...	0.0 $	1000	MOSFET N-CH 1000V 4A TO-2...
2SK1341-E	Renesas Elec...	0.0 $	1000	MOSFET N-CH 900V 6A TO-3P...
2SK1342-E	Renesas Elec...	--	1000	MOSFET N-CH 900V 6A TO-3P...
2SK1829TE85LF	Toshiba Semi...	0.0 $	1000	MOSFET N-CH 20V 0.05A USM...
2SK1445LS-V-1EX	ON Semicondu...	0.0 $	1000	TRANSISTERBipolar (BJT) T...
2SK1775-E	Renesas Elec...	0.0 $	1000	MOSFET N-CH 900V 8A TO-3P...
2SK137400L	Panasonic El...	0.0 $	1000	MOSFET N-CH 50V 50MA SMIN...
2SK1058-E	Renesas Elec...	--	1000	MOSFET N-CH 160V 7A TO-3P...