2SK122800L Discrete Semiconductor Products

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The 2SK122800L is an enhancement-mode laterally-diffused metal-oxide semiconductor field-effect transistor (LDMOSFET) with a single drain. It is designed to be used in applications in the RF communication market such as cellular base station power amplifiers. The 2SK122800L provides quality, dependability and reliability. This transistor provides excellent linearity, quick switch-on and low insertion loss.

The 2SK122800L LDMOSFET works using the principles of electric fields and capacitance. It employs a metallic gate (electrode) that forms a "channel" to the substrate when electric fields are applied to it. The electric fields control the conductivity of the underlying substrate by controlling the width of the "channel". When negative bias is applied to the gate, it creates a very thin depletion region and the body of the substrate is able to become conducting.

This LDMOSFET is designed to minimize power dissipation while providing good linearity and switching performance. The 2SK122800L consists of an enhancement-mode commonly-connected drain and two source terminals. Due to this structure, it provides an improved linearity over conventional FETs by creating an additional transistor. This helps to reduce distortion and improve switching performance.

In order to get the best performance from the 2SK122800L, it requires proper operation current, thermal and bias handling. It should be operated within the specified voltage and current ratings. The source terminal needs to be biased at a dynamic resistance (RDS(ON)) which is based on the device size and application. The drain voltage needs to be within the device\'s power dissipation rating, between the specified VDS (Drain-Source Voltage), ID (Continuous Drain Current) and the thermal limit.

The 2SK122800L is designed for use in a variety of RF communication applications, such as cellular base station power amplifiers, RF switches, RF Doppler Radar, RF imaging systems, and other applications that require linearity, quick switch-on and low insertion loss. It is also suitable for high-power Wi-Fi 2.4/5 GHz and LTE/WCDMA (3G/4G ) transceiver applications.

The 2SK122800L is a versatile and dependable LDMOSFET device. It is able to provide excellent linearity, quick switch-on and low insertion loss, making it an ideal choice for a variety of RF applications. With a well-designed power application design, the device can provide superior performance for the intended application.

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