2SK1341-E

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2SK1341-E is a high-performance power field effect transistor (FET). This MOSFET is used for high-voltage switching and power control in a variety of applications, including use as an inverter in solar and lighting systems, and in industrial and home automation systems. It has low on-resistance and specifically designed drain region to reduce conduction losses.

The 2SK1341-E adopts an insulated gate field effect structure with an integrated gate-source junction. The insulated gate allows current to be controlled with an electric field. It is produced using a lateral vertical N-type MOSFET, which is protected using a dielectric insulating material on the surface of the FET.
The 2SK1341-E uses a planar Gate Structure, which helps achieve low on-resistance and high-performance switching. It also has an ultra-thin silicon layer with an integrated resistor. This makes it highly efficient for power control in various applications. The integrated gate-source junction makes the device suitable for high voltage applications.

The 2SK1341-E operates in three modes according to the magnitude of applied voltage. These are the linear region, the ohmic region and the saturation region. In the linear region, the voltage-current relationship is linear and the FET behaves like an ohmic resistor. In the ohmic region, drain and source currents are the same. In this region, the FET behaves like an amplifier. The saturation region, meanwhile, has the highest current gain. With the drain and source electrodes connected, the FET acts like a switch and current-voltage relationship is at its most efficient. In the 2SK1341-E, the gate-source voltage (VGS) controls the output current. When the gate voltage is above the threshold voltage (VTH), the device will start to conduct. As the gate voltage increases, more current will flow through the channel. When a certain voltage is reached (the gate-source voltage) the channel is completely saturated and current is at a maximum. The threshold voltage and the maximum drain current (ID) vary according to the gate-source voltage. The 2SK1341-E can also be used as a negative temperature coefficient (NTC) device, as the threshold voltage and maximum drain current decrease as the chip temperature goes up. 2SK1341-E offers excellent switching performance and is highly efficient in a variety of applications such as power control and LED lighting systems. It is very effective in reducing conduction losses, making it a reliable choice when it comes to high-power applications. It also provides a low on-resistance, making it highly suitable for high-speed switching applications.

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