2SK209-GR(TE85L,F) Discrete Semiconductor Products

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The 2SK209-GR is a MOSFET (metal-oxide semiconductor field-effect transistor) that is specifically designed for RF (radio frequency) applications. It is mainly used in circuit designs that require high-frequency switching and operating at power levels upwards of 600W. This makes it suitable for circuits that require both low-noise operation and high output power levels, such as amplifiers, mixers, and RF power amplifiers.

The 2SK209-GR MOSFET is designed using a TrenchMos™ process, which combines doping and electrical contacting inside of the two-dimensional trench structure of the MOSFET. This technology is used to create both low-resistance contacts and low thermal resistance in the device. As a result, the 2SK209-GR is capable of providing excellent power output and high-speed switching performance in RF circuits.

The 2SK209-GR is built in a TO-220 package, with a total of five pins used for connecting to an external circuit. Two of the pins are the sources and are connected to the transistor’s drain. The other three pins are the gates and are used to control gate voltages for biasing purposes. When biased properly, the source and drain of the 2SK209-GR can be used as either a closed switch or an open switch, allowing the device to be used in a variety of switching applications. Additionally, the 2SK209-GR is capable of withstanding large voltages without sustaining damage.

The 2SK209-GR MOSFET is capable of providing high power outputs with high-speed switching capability. It has a high-frequency response, with a maximum frequency of 2.2GHz, and has been designed to work reliably in high-temperature conditions. Additionally, the MOSFET is designed to ensure frequency-stable operation at high power levels. This makes it an ideal choice for use in amplifiers, mixers, and RF amplifiers.

Overall, the 2SK209-GR MOSFET is an excellent choice for use in high-frequency switching applications. Its low-noise, high-speed design allows it to provide excellent power output while maintaining stable frequency operation. Additionally, its built in TO-220 package makes it easy to install into circuit designs. With its low thermal resistance and good heat dissipation properties, the 2SK209-GR is an excellent choice for use in RF applications that require both high power and fast switching.

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