Allicdata Part #: | 2SK2719(F)-ND |
Manufacturer Part#: |
2SK2719(F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 900V 3A TO-3PN |
More Detail: | N-Channel 900V 3A (Ta) 125W (Tc) Through Hole TO-3... |
DataSheet: | 2SK2719(F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P(N) |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 750pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.3 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The 2SK2719(F) is a field-effect transistor (FET) produced by Toshiba Corporation, one of Japan\'s largest semiconductor manufacturers. It is a n-channel enhancement mode FET, meaning it has one n-type source and two n-type drain terminals. The FET is made of silicon, and the total gate-source voltage can range from -5 V to 30 V. Because of its high output current and low switching noise, the 2SK2719(F) is well suited for a variety of uses, most notably in transceivers and amplifiers.
The working principle of 2SK2719(F) is based on the principle of minority carrier injection. This principle is based on the fact that when a negative voltage is applied to the gate terminal of a device, it attracts the minority carriers in that region and injects them into the region of the drain terminal. This process creates a conductive channel between the source and the drain terminal. In the 2SK2719(F), the injected carriers form a conduction channel, allowing current to flow from the source to the drain terminal.
Applications of 2SK2719(F) include transceivers, amplifiers, frequency multipliers, voltage regulators, and DC-DC converters. Because of its low switching noise and high output current, it is ideal for applications that require high power transfer and low noise. In transceivers, for example, the FET is used to amplify signals before they are transmitted. It is also used in amplifiers to increase the gain of the signal, as well as to remove any noise from the signal. Likewise, in frequency multipliers, the FET is used to multiply the frequency of the signal, while in voltage regulators it is used to step up or down the voltage.
Due to its superior performance and cost-effectiveness, the 2SK2719(F) is widely used in a variety of applications. It is particularly popular in radio-frequency amplifiers and in LED drivers, where it can be used to replace larger, costlier components. Additionally, it is well suited for automotive applications, where it can be used to improve the efficiency of the cars\' systems. It is also used for DC-DC converters, which are used in a variety of electronic products.
Overall, the 2SK2719(F) is an effective, reliable, and cost-efficient transistor. With its high output current and low switching noise, it can be used for a variety of applications, from transceivers and amplifiers to voltage regulators and DC-DC converters. Moreover, its versatility makes it an ideal choice for automotive and radio-frequency applications. It is for these reasons that the 2SK2719(F) is a widely used and dependable FET.
The specific data is subject to PDF, and the above content is for reference
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