2SK2266(TE24R,Q) Allicdata Electronics
Allicdata Part #:

2SK2266(TE24R,Q)-ND

Manufacturer Part#:

2SK2266(TE24R,Q)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 60V 45A TO220SM
More Detail: N-Channel 60V 45A (Ta) 65W (Tc) Surface Mount TO-2...
DataSheet: 2SK2266(TE24R,Q) datasheet2SK2266(TE24R,Q) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
FET Feature: --
Power Dissipation (Max): 65W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-220SM
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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The 2SK2266 is a field-effect transistor (FET) manufactured by Toshiba. This type of device is often seen in switching, amplification and voltage control applications. Specifically, it is categorized as a single-gate N-channel silicon power MOSFET unit. It is part of a family of FETs and is known by part names such as TE24R,Q.The 2SK2266 utilizes a construction scheme known as a planar process. It consists of an area on a semiconductor material that is layered with insulation and other elements. This allows for low-resistance contacts between different parts of the chip.The main purpose of a MOSFET transistor is to act as a switch. This device is able to turn on or off a specific current flow between any two of its three terminals. When in its "on" state, the transistor allows current to flow and when in the "off" state, it prevents flow. In the case of the 2SK2266, its three terminals have specific functions. The gate terminal is used to control whether the device is in its "on" or "off" state. When a positive voltage is applied to this terminal, the device is turned "on". The drain terminal is the output of the transistor, while the source is the input.The characteristics of the 2SK2266 make it suitable for use in several applications. Its ability to switch up to 240volts and 20 amps make it a great option for power management systems, such as motor controllers. Its low on-resistance also makes it suitable for noise reduction of audio amplifiers. Additionally, its low drain-source resistance allows it to be used in power switching circuits and as a protection device for other components.In addition to its convenience for use in a variety of applications, the 2SK2266 has excellent thermal stability. Its maximum junction temperature of 175°C makes it suitable for high-power applications. Additionally, its operating temperature range of -55°C to 175°C makes it a great option for use in harsh environments. Furthermore, when compared to other types of MOSFETs, the 2SK2266 is typically more affordable. This cost-effectiveness combined with its excellent durability and performance make it a great choice for many electronic applications.It is important to note that the 2SK2266 is sensitive to electrostatic discharge. It is recommended that users wear an appropriate wrist strap while handling this type of device. Additionally, all connections should be made in accordance to the manufacturer’s specifications.In summary, the 2SK2266 is an excellent option for power management, noise reduction, and protection applications. Its ability to switch up to 240 volts and 20 amps make it an ideal choice for many projects. Additionally, its affordability, excellent thermal stability and durable construction characteristics make it an ideal choice for many electronics applications.

The 2SK2266 is a field-effect transistor (FET) manufactured by Toshiba. This type of device is often seen in switching, amplification and voltage control applications. Specifically, it is categorized as a single-gate N-channel silicon power MOSFET unit. It is part of a family of FETs and is known by part names such as TE24R,Q.

The 2SK2266 utilizes a construction scheme known as a planar process. It consists of an area on a semiconductor material that is layered with insulation and other elements. This allows for low-resistance contacts between different parts of the chip.

The main purpose of a MOSFET transistor is to act as a switch. This device is able to turn on or off a specific current flow between any two of its three terminals. When in its "on" state, the transistor allows current to flow and when in the "off" state, it prevents flow. In the case of the 2SK2266, its three terminals have specific functions. The gate terminal is used to control whether the device is in its "on" or "off"

The specific data is subject to PDF, and the above content is for reference

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