Allicdata Part #: | 2SK2967(F)-ND |
Manufacturer Part#: |
2SK2967(F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 250V 30A TO-3PN |
More Detail: | N-Channel 250V 30A (Ta) 150W (Tc) Through Hole TO-... |
DataSheet: | 2SK2967(F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 1mA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P(N) |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5400pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 132nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 68 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Ta) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The 2SK2967(F) transistor is a member of the field-effect transistor (FET) family and is classified as an insulated-gate bipolar transistor (IGBT). It is a single-gate N-channel MOSFET that is ideal for analog and digital switch applications. It has a low Rds-on and high speed switching, so it is well suited for power management, general-purpose switching, power conversion, amplifier, pulse/time-delay circuit, electrical/electronic circuit switching, and other similar functions.
The gate of the 2SK2967(F) operates in a voltage mode and contains a control transistor and an insulated gate. The control transistor is responsible for controlling the drain-to-source current. The gate of the transistor operates in such a way that when the gate-voltage is raised, the gate is "closed" and creates an electric field that blocks the flow of current from the drain to the source. When the gate-voltage is lowered, the "open" gate allows the current to flow freely from the drain to the source. The insulated gate is designed to prevent any leakage current from flowing between the gate and the source. This helps to reduce noise, increase efficiency, and maximize performance.
The breakdown voltage of the 2SK2967(F) is rated at 150 volts, with a drain-source voltage of 10 volts. The drain-source on-resistance is usually two times lower than the gate-drain on-resistance. The rise and fall of the drain-source voltage is controlled by controlling the gate voltage. The gate-source capacitance is rated at 725 pF (picoFarads) and the gate-drain capacitance is rated at 110 pF.
The 2SK2967(F) transistor is best suited for applications that require a low Rds-on, high switching, and precision voltage control. It is commonly used in powertopower management applications, suchas power converters, amplifiers, and power Pulse/Time-Delay circuiting for switching and controlling electrical/electronic circuits. It is also used in medical equipment and home theatre systems. The highspeed switching of the 2SK2967(F)transistor makes it well suited for these types of applications, providing precise control and accuracy.
In conclusion, the 2SK2967(F) transistor is a versatile electronic component that is used in a variety of applications. It provides a low drain-source on-resistance, high switching speed, and precise voltage control to power circuits in medical equipment, home theatre systems, automotive power control, and a wide range of other applications. The on-resistance and capacitance values are also relatively low, which reduces power dissipation and increases efficiency.
The specific data is subject to PDF, and the above content is for reference
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