Allicdata Part #: | 2SK2847(F)-ND |
Manufacturer Part#: |
2SK2847(F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 900V 8A TO-3PN |
More Detail: | N-Channel 900V 8A (Ta) 85W (Tc) Through Hole TO-3P... |
DataSheet: | 2SK2847(F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P(N)IS |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 85W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2040pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 58nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Ta) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The 2SK2847(F) is a high power n-channel MOSFET commonly used in a variety of industrial, automotive and consumer electronic applications. It is an enhancement type transistor, which means that it is normally off and requires an input voltage to turn it on. The 2SK2847(F) has an on-resistance of 3.2 Ohms and can handle 216W of power at 125°C.
The 2SK2847(F) is used in many power switching applications, such as in power supplies, DC motors, solenoids, and automotive systems. It is commonly used as a switching device in high power applications, such as controlling the speed of motors, or driving high current loads such as motors and lamps. It is also used to control the voltage output from a power supply, or to provide noise protection for audio circuits.
The working principle of the 2SK2847(F) is based on the MOSFET technology. A MOSFET is usually a three terminal silicon device which is composed of an n-type substrate and a gate-coupled with a Metal Oxide Semiconductor (MOS). The MOSFET works by permitting or inhibiting current through the channel between the source and drain terminals, while the gate terminal controls the overall operation of the device. When the gate voltage is applied, electrons accumulate near the gate-coupled MOS and form an “n-channel”. This channel helps to control the current through the device by either allowing or restricting the current. In essence, the MOSFET works as a voltage-controlled resistor, which can switch the current from the drain to the source.
In order for the MOSFET to work at its optimal level, the operating temperature must be in the specified range. When the temperature is too high, the MOSFET may become less reliable due to thermal stress. Exceeding the recommended operating temperature can lead to loss of performance or even damage to the device. Excessive gate voltage may also cause the 2SK2847(F) to fail.
The 2SK2847(F) MOSFET is used in many applications due to its low on-resistance and high power handling capability. It provides a reliable, cost-effective solution for powering various electronic devices. Furthermore, the device is relatively easy to use, with standard connections and simple gate control techniques. This makes the 2SK2847(F) a popular choice for many devices.
The specific data is subject to PDF, and the above content is for reference
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