Allicdata Part #: | 2SK33720RLTR-ND |
Manufacturer Part#: |
2SK33720RL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | JFET N-CH 2MA 100MW SSSMINI-3P |
More Detail: | JFET N-Channel 2mA 100mW Surface Mount SSSMini3-F... |
DataSheet: | 2SK33720RL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Drain to Source Voltage (Vdss): | 20V |
Current - Drain (Idss) @ Vds (Vgs=0): | 107µA @ 2V |
Current Drain (Id) - Max: | 2mA |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 100mW |
Operating Temperature: | -20°C ~ 80°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | SSSMini3-F1 |
Base Part Number: | 2SK3372 |
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2SK33720RL application field and working principle
The 2SK33720RL is an N-Channel Junction Field-Effect Transistor (JFET). It is used as an amplifier and a switch, and is suitable for applications like signal transmission and switching. This device is constructed with P-type silicon and is mainly used for low-frequency applications. The 2SK33720RL has a maximum DC operating voltage of 12 volts and a continuous drain current of 75 mA.
The JFET structure of this device consists of two P-type silicon layers placed next to each other, forming a PN junction between them. The outer layer is called the gate, and the inner layer is called the source. The junction is between the gate and the source. The third electrode of the JFET is the drain, which is connected to the inner layer. The construction of this device is designed so that the charge carriers flow from the source to the drain when a positive voltage is applied to the gate.
The design of the 2SK33720RL allows it to be used in many different applications. One of the common uses of this device is as a voltage-controlled switch. This device can be used to control the gate voltage to turn the device on or off. By controlling the gate voltage, the JFET can either allow or prevent current from flowing between the source and the drain. This device is also used in audio amplifiers and radio frequency (RF) applications, as it can amplify the signal by controlling the gate voltage.
The working principle of the 2SK33720RL is based on the phenomenon known as the gate effect. This phenomenon occurs when a voltage is applied between the gate and the source, which causes an electric field to form in the depletion region between them. This electric field then causes charge carriers such as electrons and holes to be attracted to the gate, and this causes a change in the resistance between the source and the drain. By controlling the gate voltage, the resistance can be changed, which in turn allows the current to be controlled.
The 2SK33720RL is a versatile device, as it can be used for a wide variety of applications. Its structure makes it suitable for use in signal transmission and switching, as well as low-frequency audio amplifiers and RF applications. The 2SK33720RL is a reliable device for applications that require precise control of current flow.
The specific data is subject to PDF, and the above content is for reference
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