Allicdata Part #: | 2SK3403(Q)-ND |
Manufacturer Part#: |
2SK3403(Q) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 450V 13A TO220FL |
More Detail: | N-Channel 450V 13A (Ta) 100W (Tc) Through Hole TO-... |
DataSheet: | 2SK3403(Q) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-220-3, Short Tab |
Supplier Device Package: | TO-220FL |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Ta) |
Drain to Source Voltage (Vdss): | 450V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The 2SK3403(Q) is a single-gate field effect transistor (FET) commonly used in electronic engineering applications. It is a high-performance device that is suitable for both low-noise and high-speed switching applications. It is an ideal choice for circuits requiring high switching speeds and low power dissipation.
The 2SK3403(Q) is a high-speed surface-mounted device (SMD) constructed with a single gate N-channel silicon (Si) MOSFET. It is designed for operation at direct current (DC) supply voltages ranging from 3 to 30 V and is compatible with most standard data buses. The device also features high-speed switching with a low on-resistance and a wide range of input and output capacitance.
The device\'s high-speed switching capabilities make it well-suited for a variety of applications, including high-frequency switching, audio switching, video switching, digital audio and video transmission, clock distribution, and driving frequency multipliers. It is also ideal for power management applications, such as reversing motor direction, home appliance controls, and DC-DC converters.
The 2SK3403(Q) features an integrated self-limiting ESD protection circuit to protect against electrostatic discharge (ESD) up to 8kV. This makes it an ideal choice for applications that require reliable electrostatic protection from transients, such as telecommunications and medical equipment. The device is also isolation-rated for isolation from other circuit components, which makes it suitable for use in safety-critical applications.
The working principle of the 2SK3403(Q) is based on the electrical behavior of a MOSFET. A MOSFET is a voltage-controlled FET that is used in electronic circuits to switch high-frequency signals on and off. The gate of the MOSFET works as a switch and is capable of controlling the flow of electrons between the drain and source terminals, which makes it an ideal choice for high speed switching applications.
When the gate voltage is in the OFF-state, very little current is flowing through the device, resulting in a low on-resistance. When the gate voltage is increased to the ON-state, the electrons can pass through the device, resulting in a higher on-resistance. This makes the device suitable for controlling the power that is supplied to the output of the circuit.
The 2SK3403(Q) is a single-gate MOSFET that can be used in a variety of applications, including high-speed switching, audio switching, video switching, digital audio and video transmission, clock distribution, and driving frequency multipliers. The device has a low on-resistance and a high-speed switching capability, making it ideal for a wide range of applications. It also features an integrated self-limiting ESD protection circuit to protect against electrostatic discharge, making it an ideal choice for applications requiring reliable protection from transients.
The specific data is subject to PDF, and the above content is for reference
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