2SK303100L Allicdata Electronics

2SK303100L Discrete Semiconductor Products

Allicdata Part #:

2SK303100LTR-ND

Manufacturer Part#:

2SK303100L

Price: $ 0.76
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: MOSFET N-CH 100V 15A UG-1
More Detail: N-Channel 100V 15A (Tc) 1W (Ta), 20W (Tc) Surface ...
DataSheet: 2SK303100L datasheet2SK303100L Datasheet/PDF
Quantity: 3000
3000 +: $ 0.68936
Stock 3000Can Ship Immediately
$ 0.76
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: U-G1
Supplier Device Package: U-G1
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1W (Ta), 20W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 135 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The 2SK303100L is a trench type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) from the ROHM Semiconductor family. It is a single FET (Field Effect Transistor) that is designed for linear mode applications.

The 2SK3031L00 is intended for use as a general-purpose power switch or linear amplifier. It has an excellent drain current capability, extremely low on-resistance and very good switching speed. The device is rated to handle a drain current up to 100A and the 2SK3031L00 can withstand up to 200V drain source voltage.

The 2SK303100L is composed of two terminals, gate and drain. These two terminals receive the external control signals, which are then processed and applied to the junction beneath the gate. The drain and source terminals are connected by a channel of N-type silicon and phosphate, allowing the current to flow. When a gate voltage is applied to the gate terminal, the drain and source terminals are connected, and current begins to flow.

Once a gate voltage is applied, the device will begin to operate in the linear region, meaning the drain current will not be constant. When the MOSFET is operating in the linear region, the drain current is controlled by the gate voltage. The higher the gate voltage, the higher the drain current will be. As the voltage is increased further, the device will start to operate in the saturation region, meaning that the drain current is limited to its maximum value.

The 2SK303100L is suitable for a wide range of applications, such as motor control, power converters, switching of power loads, home appliances, telecommunications, and industrial control.

Its wide applications make the 2SK303100L a very useful device. Its low resistance, high current and switching speed properties makes it ideal for applications such as motor control, power converters, and switching of power loads, allowing these operations to be accomplished much faster and more efficiently.

In summary, the 2SK303100L is a single FET, designed for linear mode applications, such as motor control and power converter applications. Its extended drain-source voltage range and high drain-source current capability make it suitable for a wide range of applications. Its low on-resistance, high current and switching speed properties make it ideal for efficient operation in motor control, power converters, and switching of power loads.

The specific data is subject to PDF, and the above content is for reference

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