Allicdata Part #: | 2SK3800-ND |
Manufacturer Part#: |
2SK3800 |
Price: | $ 1.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | MOSFET N-CH 40V TO-220S |
More Detail: | N-Channel 40V 70A (Ta) 80W (Tc) Surface Mount TO-2... |
DataSheet: | 2SK3800 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.14616 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5100pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 80W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-220S |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The 2SK3800 is a single-gated P-channel JFET field-effect transistor (FET) manufactured by Toshiba. The device is designed for use in low power/low noise amplifier applications, as well as switching and general purpose applications. This article will discuss the application field and working principle of the 2SK3800.
Application Field
The 2SK3800 is ideal for low power/low noise amplifier applications, as it has an extremely low input capacitance and excellent low noise characteristics. It is also suitable for use in power transistor circuits, such as switching and general purpose applications. The 2SK3800 can be used in both AC and DC circuits.
The 2SK3800 is available in a variety of packages, including the TO-92, SOT23-3, SOT-23, SSOT-6, SOT-223 and SSOT-8 packages. The device is also available in both leaded and leadless (surface-mount) packages.
Working Principle
The 2SK3800 is a P-channel JFET (also known as a junction gate field-effect transistor). It consists of a source, drain and gate terminal. The source and drain terminals are made up of two oppositely doped junctions, while the gate terminal is a vertical junction between the two junctions. In the off state, the vertical gate junction is reverse biased and no current can flow between the source and drain terminals. When a positive voltage is applied to the gate terminal, it is forward biased and a channel begins to form in the body region between the source and drain terminals.
The channel formed allows current to flow between the source and drain terminals when a voltage is applied to them. The channel is controlled by the voltage on the gate terminal and the width of the channel is determined by the amount of current flowing through it. As the current flowing through the channel increases, the width of the channel decreases, and vice versa.
The 2SK3800 is designed for low power/low noise applications. It has a very low input capacitance and excellent low noise characteristics. The drain-source breakdown voltage is also very low, making it suitable for use in low power circuits. The 2SK3800 also has very good thermal stability, making it suitable for high-frequency applications.
Conclusion
In conclusion, the 2SK3800 is a single-gated P-channel JFET field-effect transistor manufactured by Toshiba. It is designed for low power/low noise amplifier applications, as well as switching and general purpose applications. The device has a very low input capacitance and excellent low noise characteristics. It is also available in a variety of packages, making it suitable for a wide range of applications. The 2SK3800 is suitable for use in both AC and DC circuits and has very good thermal stability, making it suitable for high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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2SK3430-AZ | Renesas Elec... | 0.0 $ | 1000 | MOSFET N-CH 40V 80A TO220... |
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2SK3431-AZ | Renesas Elec... | 0.0 $ | 1000 | MOSFET N-CH 40V 83A TO220... |
2SK3431-Z-E1-AZ | Renesas Elec... | 0.0 $ | 1000 | MOSFET N-CH 40V 83A TO220... |
2SK3816-DL-E | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 40A SMP-F... |
2SK3817-DL-E | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 60A SMP-F... |
2SK3820-DL-E | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 26A SMP-... |
2SK3821-DL-E | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 40A SMP-... |
2SK3821-E | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 40A SMPN... |
2SK3823 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 40A TO220... |
2SK3824 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 60A TO-22... |
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