Allicdata Part #: | 2SK3703-1EOS-ND |
Manufacturer Part#: |
2SK3703-1E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 30A |
More Detail: | N-Channel 60V 30A (Ta) 2W (Ta), 25W (Tc) Through H... |
DataSheet: | 2SK3703-1E Datasheet/PDF |
Quantity: | 535 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F-3SG |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta), 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1780pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The 2SK3703-1E is a single J-FET transistor, which is widely used in a variety of electronic applications, due to its high-quality performance and reliable operation. The 2SK3703-1E has a wide variety of uses, including power amplifiers and high-gain amplifiers. The combination of its low power requirements, low power dissipation and high gain makes it a popular choice for many different types of applications.
The 2SK3703-1E is a junction field-effect transistor (JFET) device. A JFET is a solid-state semiconductor device, which is able to control current through a channel between its source and drain, by using an electric field. This is known as the reverse-bias principle. JFETs are usually used in high-frequency, low-noise applications, due to their ability to provide near-zero capacitance. The 2SK3703-1E is also able to achieve a wide input and output range, which makes it versatile in its uses.
One of the main advantages of the 2SK3703-1E is its low-power dissipation. The device requires only around 60mA of current, which allows it to operate without additional power sources. This makes the 2SK3703-1E an ideal choice for many battery-powered applications that require low current, such as remote-control circuits. Additionally, the 2SK3703-1E does not require a heat sink or other cooling devices, which further adds to its efficiency and economy.
The 2SK3703-1E also features a wide gain range, allowing it to be used as an amplifier or in voltage-controlled devices. It is able to amplify signals up to 50kHz and its wide input and output can be used to manipulate almost any type of signal. This makes the 2SK3703-1E useful in audio-processing applications, such as audio-frequency amplifiers. It can also be used in voltage-controlled amplifiers and oscillators, due to its wide gain range.
The 2SK3703-1E is also extremely reliable and has a long operational life. The device is constructed using reliable materials, making it resistant to corrosion and other environmental factors, and its low power requirements make it extremely efficient. This makes the 2SK3703-1E well suited for applications that require long-term operation without fail, such as life support systems.
Overall, the 2SK3703-1E is a versatile JFET transistor device that is well suited for a wide range of applications. Its low power requirements, wide gain range and reliability make it an attractive choice for many different types of electronic devices. Additionally, its low power dissipation and wide input and output ranges make it useful in a wide variety of audio-processing and voltage-controlled applications.
The specific data is subject to PDF, and the above content is for reference
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