2SK3756(TE12L,F) Discrete Semiconductor Products

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A Field Effect Transistor, or FET, is a semiconductor device composed of a source, gate, and drain. It is used to amplify or switch electronic signals and power. The 2SK3756 (TE12L,F) is a high-performance, low-noise, modulation type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is used in RF (Radio Frequency) applications. It is designed to provide low-noise amplification of RF signals and is used in high-frequency applications such as TV receivers, satellite receivers, transmitters, and wireless infrastructure.

The 2SK3756 (TE12L,F) has a gate-drain capacitance of only 1.2 pF, which allows it to operate at higher frequencies than other MOSFETs. It has a low gate threshold voltage, which helps it to operate at lower drain voltages, allowing it to be used in battery powered applications. The 2SK3756 (TE12L,F) also has a low gain, meaning it requires less power to drive and is energy efficient. It also features high input and output impedance, which is useful in preventing parasitic inductance in the circuit.

The working principle of a FET is the same as that of a conventional transistor, except that the gate voltage is used to control the flow of current instead of controlling the base current. In the N-channel MOSFET, the current flow is from the drain to the source when a positive gate-source voltage is applied. The transistor acts as an electronic switch and opens or closes depending on the voltage applied to the gate. When the voltage is zero or negative, the transistor is off and does not conduct current. When the applied voltage is positive, the transistor is on and current flows from the drain to the source.

The 2SK3756 (TE12L,F) has a maximum drain source voltage of 75V and can handle up to 15A of drain current. It is designed to withstand temperatures up to 175°C and is made up of a rugged construction that helps it to withstand harsh environments. Its high gain bandwidth product and wide bandwidth provide excellent noise rejection and suppression of spurious signals, making it the ideal solution for a variety of RF applications. Its high input impedance also makes it an ideal choice for broadband amplifiers, mixers, modulators, and frequency multipliers.

In conclusion, the 2SK3756 (TE12L,F) is a high-performance, low-noise, modulation type MOSFET for RF applications. It offers a low gate-drain capacitance, low gain bandwith product and wide bandwidth, low gate threshold voltage, high input impedance and high power dissipation. It is ideal for applications that require high gain, low noise and a rugged construction. With its wide range of features, it is an excellent choice for RF applications.

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