2SK3816-DL-E Allicdata Electronics
Allicdata Part #:

2SK3816-DL-E-ND

Manufacturer Part#:

2SK3816-DL-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 40A SMP-FD
More Detail: N-Channel 60V 40A (Ta) 1.65W (Ta), 50W (Tc) Surfac...
DataSheet: 2SK3816-DL-E datasheet2SK3816-DL-E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: SMP-FD
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.65W (Ta), 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The 2SK3816-DL-E is a N-channel MOSFET from Toshiba Semiconductor and Storage, which is a specialty device for portable applications where cost and power consumption are critical. It is a low-voltage, low-current device that is similar to a Digital-to-Analog Converter (DAC) that is used to control the output of a power amplifier, transistor driver or another signal. This small, low-power MOSFET is easy to use, requires very little power and provides excellent performance.

The 2SK3816-DL-E is an enhancement mode transistor. This means that it needs devices with a positive gate voltage to turn on. The transition from the off state to the on state is gradual, allowing the device to operate at lower powers and with greater accuracy than those of other transistors. This allows the device to be used in applications where lower voltages are required. It also means that it does not require a large amount of current for the gate, which helps to keep the power consumption low.

The MOSFETs all have two terminals, the source and the drain, and one terminal, the gate, which is usually insulated. When the gate voltage is applied, current will flow from the source to the drain. The 2SK3816-DL-E has three different gate voltages that can be used, depending on the application. The three gate voltages are: VGS = -5V, 0V and 10V.

The 2SK3816-DL-E has several different applications depending on the type of circuit that is needed. It is typically used in audio amplifiers, switching power supply, DC-DC converters, RF amplifiers and other low-power, low-voltage applications. In these applications, the device serves as a switch, which is used to control the current that flows through the circuit.

The operation of the 2SK3816-DL-E is based on the principle of capacitance. The gate terminal is insulated from the other two terminals and so is able to store a charge. When the gate voltage is applied, the charge stored in the gate will affect the current flowing through the transistor. The more voltage applied, the greater the effect this has. This is why the three different gate voltages are specified for the device.

The 2SK3816-DL-E is an ideal device for many types of applications, particularly those where cost and power consumption are critical factors. It is a low power device that is easy to use and provides excellent performance. It provides excellent switching performance, a low input capacitance and low threshold voltage. This makes it the ideal choice for many different types of low-voltage, low-power applications.

The specific data is subject to PDF, and the above content is for reference

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