Allicdata Part #: | 2SK3707-1E-ND |
Manufacturer Part#: |
2SK3707-1E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 20A |
More Detail: | N-Channel 100V 20A (Ta) 2W (Ta), 25W (Tc) Through ... |
DataSheet: | 2SK3707-1E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F-3SG |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta), 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2150pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The 2SK3707-1E is a single-channel low frequency MOSFET used in television receivers and other electronic devices. It is a high-performance silicon-type semiconductor device, which is characterized by low drain-source resistance and low gate capacitance. This MOSFET is designed for use in a wide range of applications, including switching power supplies, amplifiers, TV transmitters and various other high-power solutions.
The drain-source resistance of the 2SK3707-1E is generally much lower than that of other types of MOSFETs. Additionally, the gate capacitance of the 2SK3707-1E is much lower than that of other types of MOSFETs. It can be used for high-speed switching applications, due to its low drain-source resistance, high-frequency switching and low gate capacitance.
The 2SK3707-1E can be used in a variety of applications, including TV receivers, industrial controls, motor control, automotive electronics and audio amplifiers. In TV receivers, it is used as part of the audio/video output amplifier to drive the TV speaker. It is also used in LDOs (low dropout regulators) and PWM (pulse-width modulation) controllers. Additionally, it is found in home theater systems, amplifiers and other electronic devices.
The working principle of the 2SK3707-1E involves the use of electrons. When a low frequency signal is applied to the gate, it creates an electric field in the drain-source of the device. This electric field causes the electrons to flow from source to drain, creating an amplified signal. The amplified signal can then be used to drive the speakers or other devices.
The 2SK3707-1E is a high-performance device, which makes it suitable for a variety of applications. Its low drain-source resistance and low gate capacitance make it suitable for high-speed switching applications, while its low gate-source capacitance makes it suitable for use in high-power solutions. Additionally, its low gate-source capacitance and low drain-source resistance make it suitable for use in LDOs and PWM controllers.
In summary, the 2SK3707-1E is a single-channel low frequency MOSFET used in television receivers and other electronic devices. It is characterized by low gate and drain-source resistance and low gate capacitance, making it suitable for a wide range of applications. The working principle of this MOSFET involves the use of electrons and an electric field in the drain-source, which results in an amplified signal.
The specific data is subject to PDF, and the above content is for reference
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