2SK3546G0L

Vgs(th) (Max) @ Id:	1.5V @ 1µA
Package / Case:	SC-89, SOT-490
Supplier Device Package:	SMini3-F2
Mounting Type:	Surface Mount
Operating Temperature:	125°C (TJ)
Power Dissipation (Max):	125mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	12pF @ 3V
Vgs (Max):	±7V
Series:	--
Rds On (Max) @ Id, Vgs:	12 Ohm @ 10mA, 4V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4V
Current - Continuous Drain (Id) @ 25°C:	100mA (Ta)
Drain to Source Voltage (Vdss):	50V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The 2SK3546G0L is a finely-crafted and highly specialized Field Effect Transistor (FET) that is commonly utilized in the fields of motor and battery controls, power management, and power switching. These devices are of the single MOSFET type, meaning that the physical arrangement of the electronic components places the metal-oxide semiconductor element at the heart of the device in direct communication with the conducting and controlling elements of the FET. In this article, we’ll take a closer look at the application field and working principles of the 2SK3546G0L.The 2SK3546G0L finds wide usage in a variety of modern applications, including motor and battery controls, power management, and power switching. This is due to its ability to handle up to 3.2 A of drain current, with a maximum drain-source voltage of 39V and a gate-source voltage of ±20V. Additionally, this FET features a very low on-resistance of just 0.2 Ohms, making it an ideal choice for applications which demand high levels of efficiency and long-term reliability.As a single MOSFET with an interconnected metallic channel and gate, the 2SK3546G0L is subject to the same general operating principles as all other FETs. To start, an electrical field is created between the source, drain, and gate terminals of the device. This field is created by applying a voltage to the gate terminal and is known as the “gate bias voltage.” The gate bias voltage has a direct bearing on the operational characteristics of the FET, including the total current flowing through the device, the drain-source voltage, the gate-source voltage, and the on-resistance.To better understand how a FET allows current to flow, it helps to think of the gate bias voltage as a “gate lever.” Just as you would use a lever to open or close a valve, the same is true for the gate bias voltage. When the gate bias voltage is applied to the gate terminal, it opens the path between the source and drain and allows current to flow. Conversely, reducing the gate bias voltage causes the channel between the source and drain to close and restricts the flow of current.It is also important to understand that the drain-source voltage of the device is dependent on the gate bias voltage. The larger the gate bias voltage, the higher the drain-source voltage and the more current that can be passed through the device. Conversely, the smaller the gate bias voltage, the lower the drain-source voltage, and the less current that can be passed through the device.Finally, we should also consider the on-resistance of the 2SK3546G0L. As indicated above, this FET has a very low on-resistance of just 0.2 Ohms, making it particularly suitable for high-efficiency applications. This is the resistance that is encountered when the device is in its “on” state and the electrical field has been fully established between the source, drain, and gate terminals.In conclusion, the 2SK3546G0L is a highly specialized, single MOSFET Field Effect Transistor that finds wide application in motor and battery control, power management, and power switching applications. This device has a low on-resistance of just 0.2 Ohms and can handle up to 3.2 A of drain current, with a maximum drain-source voltage of 39V and a gate-source voltage of ±20V. The 2SK3546G0L is most commonly recognized for its reliability and efficiency, making it an ideal choice for modern applications with high performance requirements.

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