2SK3075(TE12L,Q)

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The 2SK3075(TE12L,Q) is a GaAs MESFET transistor that is used in many RF applications because of its highly reliable performance. This transistor is the highest rated RF MOSFET from the Toshiba 2SK range. It is designed to handle high frequency, low power applications while being power efficient and able to handle high temperature environments.

The 2SK3075(TE12L,Q) has a maximum frequency of 2.7GHz and a drain current rating of 1.0A. It has an Absorptive Switch operating mode and has been optimized to provide effective thermal resistance and maximum power capability in order to reduce supply current. This makes it ideal for many RF applications where reducing power consumption is a top priority.

The 2SK3075(TE12L,Q) is a N-channel MESFET device. It is a three-terminal device made up of three main parts which are the gate, drain and source. The gate is used to control current flow through the device and is driven by a voltage signal. It works by controlling the resistance of the channel between the source and the drain, which can be adjusted to suit the desired operating parameters of the device.

The drain and source terminals are typically connected to a power supply and are used to draw the current needed for the device to operate. The drain and source terminals also form the conducting channel by which the current flows. This means that the resistance between the source and the drain is an important factor when considering the performance of the 2SK3075(TE12L,Q).

The 2SK3075(TE12L,Q) is used in many Radio Frequency (RF) systems applications due to its extremely low power consumption and high reliability. These applications can include radio transmitters and receivers, Cellular, Wi-Fi, satellite communications, and many other radio-based systems. The 2SK3075(TE12L,Q) is also used in linear amplifiers, signal converters, signal processors, and other high frequency and low power signal amplification systems.

The 2SK3075(TE12L,Q) GaAs MESFET transistor is an excellent choice for many applications where high frequency and low power draw are critical. Its main features include high frequency, low power consumption and high reliability which make it an attractive proposition for RF applications. The device can handle temperatures up to 175°C and has been optimized to provide effective thermal resistance and maximum power capability.

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