2SK3431-Z-E1-AZ

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The 2SK3431-Z-E1-AZ is a depletion-mode MOSFET produced by Toshiba. It features a maximum drain source voltage of 30V, a maximum drain current of 70A, a minimum drain source on-state resistance of 0.021 Ω and a maximum drain source on-state resistance of 0.026 Ω. The device has a trench gate construction and a single-gate reverse polarity and is suitable for a range of applications where high power dissipation is required. This includes power amplifiers, motor controls and solenoid control circuit designs.

Application Field

The 2SK3431-Z-E1-AZ is a depletion-mode MOSFET which is used for high power dissipation applications. The device is ideal for a range of applications such as motor control, solenoid control circuit and power amplifiers. It can also be used in rectifier circuits with its breakdown voltage of 30V. The device is also suitable for switching applications due to its low on-state resistance of 0.021 Ω.

The device is also capable of operating at high switching frequencies of up to 20 kHz. It has high current handling capabilities, with a continuous drain current of 70A and a peak pulse drain current of up to 100A, making it suitable for a range of applications. The device can also handle surges of up to 300A.

Working Principle

The 2SK3431-Z-E1-AZ is a depletion mode MOSFET. This means that it is turned off when its gate-source voltage is zero or less. When the device is on, it acts like a closed switch, allowing current to flow from its drain to its source. The device can handle up to 300A of surge current and has a low on-state resistance of 0.021 Ω which ensures fast switching operations.

The device is actuated by applying a reverse polarity gate-source voltage which, in turn, causes the drain-source voltage to start increasing. As the drain-source voltage increases, current starts flowing from drain to source and the device is considered to be turned on. The device can also be turned off in a similar manner by applying a positive gate voltage which causes the drain-source voltage to decrease.

The device also has a trench gate construction which enhances its breakdown voltage to 30V. This makes it suitable for a range of applications such as rectifier circuits. The device can also operate at a high switching frequency of up to 20 kHz and has the capability of handling up to 70A of continuous drain current and up to 100A of peak pulse drain current.

Conclusion

The 2SK3431-Z-E1-AZ is a depletion-mode MOSFET designed for a range of high-power applications. It is capable of operating at a high switching frequency with a low on-state resistance and can handle up to 300A of surge current. The device features a trench gate construction which enhances its breakdown voltage to 30V and is suitable for a range of applications such as motor control, solenoid control circuit and power amplifiers.

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