2SK3539G0L Allicdata Electronics
Allicdata Part #:

2SK3539G0LTR-ND

Manufacturer Part#:

2SK3539G0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: MOSFET N-CH 50V .1A S-MINI-3P
More Detail: N-Channel 50V 100mA (Ta) 150mW (Ta) Surface Mount ...
DataSheet: 2SK3539G0L datasheet2SK3539G0L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Package / Case: SC-85
Supplier Device Package: SMini3-F2
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 150mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
Vgs (Max): ±7V
Series: --
Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 50V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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2SK3539G0L is a field effect transistor (FET) designed specifically for high current and high frequency applications. It belongs to a class of FETs known as MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and is a single device suitable for use in a variety of situations.

The unique features of 2SK3539G0L make it suitable for a variety of applications from low noise level audio amplifiers to high voltage switching circuits. It provides high gain, low distortion and excellent overload tolerance. The device is also suitable for power supply designs, DC to DC converters, magneto-resistive devices, video amplifiers and inverters.

The 2SK3539G0L is a three-terminal or three-pin device. The Gate is the control terminal; the Drain is the output terminal and the Source is the input terminal. It works on the principle of voltage polarization. When a small voltage is applied between the Gate and Source terminals, a large current flows between the Drain and Source terminals. This electrical effect is known as the channel-control effect.

The 2SK3539G0L MOSFET also has a P-N junction which acts as an insulator between the Gate and Drain. The balance between the insulated Gate voltage, the Gate-Source voltage and the Gate-Drain voltage determines the channel size. When the channel size becomes larger, the current flow increases and the channel-control effect is improved.

The 2SK3539G0L MOSFET has high current carrying capacity and excellent performance in high-frequency circuits. The Gate, Drain and Source are isolated from each other and are soldered directly to their pads, which ensures that all connections are secure and reliable. The device is also compatible with any standard surface mount technology.

The 2SK3539G0L MOSFET works effectively in both high- and low-frequency applications. Its high performance ensures that it can handle power levels of up to 150 watts and can operate up to frequencies of several hundred MHz. The device is very reliable and has been designed to provide long-term stability when exposed to extreme temperature, humidity and pressure variations.

In conclusion, the 2SK3539G0L MOSFET is an ideal device for a variety of applications due to its high current carrying capacity, high frequency performance and excellent reliability. It is also a cost-effective solution for many design projects as it is compatible with any standard surface mount technology.

The specific data is subject to PDF, and the above content is for reference

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