AFT20P060-4GNR3

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS (Dual)
Frequency:	2.17GHz
Gain:	18.9dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	450mA
Power - Output:	6.3W
Voltage - Rated:	65V
Package / Case:	OM-780G-4L
Supplier Device Package:	OM-780G-4L

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Introduction to AFT20P060-4GNR3AFT20P060-4GNR3 is a high-performance enhancement-mode field effect transistor (MOSFET) designed for RF applications. It is an economical solution for use in amplifiers, switches, and other RF designs. The device is available in a surface-mount SOIC package, and is suitable for high frequency gain up to 500 MHz or higher.

Features and Benefits of AFT20P060-4GNR3

The AFT20P060-4GNR3 has many features and benefits that make it an ideal choice for RF applications. It is a low-cost MOSFET with excellent linearity, low distortion, and high power capability. Its high performance design enables a wide range of applications such as high frequency amplifiers, switches, attenuators, and many other high frequency designs. The device is designed for linearity and low distortion, with a low noise figure of only 0.09 nV/HzLF (2.5 GHz). Additionally, the device offers good thermal resistance with a maximum junction temperature of 150 °C. Furthermore, the device has a wide range of package options, including surface-mount and through-holes.

Application Fields and Working Principle of AFT20P060-4GNR3

The AFT20P060-4GNR3 is primarily used in RF applications such as amplifiers, switches and attenuators. The device is suitable for a wide range of frequency gains up to 500 MHz or higher. The high linearity and low distortion of the device enable it to be used in RF applications of high complexity and capability. Additionally, the device has a low noise figure and high power capability, making it well-suited for applications such as low noise amplifiers and high power switches. The device has a unique switching operation, which is enabled by the FETs bi-directional characteristics.The basic operating principle of the AFT20P060-4GNR3 is based on the field effect transistor, which is a semiconductor device consisting of three layers - the source, gate and drain. The source and drain of the device are connected to the external circuit, and current is flowing between them when the gate voltage is applied. The strength of the current flow through the device is determined by the gate-source voltage, and thereby, by the voltage applied to the gate of the device. The device is designed for high linearity and low distortion, which is achieved by optimizing the gate-source voltage.

Conclusion

In conclusion, the AFT20P060-4GNR3 is a high performance RF MOSFET device, ideal for use in radio frequency amplifiers, switches, and many other applications. The device features a wide range of package options, low noise figure, low distortion, and high power capability. Its unique bi-directional current capability enables it to be used in a wide range of RF applications. The device is an economical solution for use in linear, low distortion designs up to 500 MHz or higher.

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