AFT26H250-24SR6

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The AFT26H250-24SR6 is a field effect transistor (FET) designed specifically for use in radio frequency (RF) applications.

A FET is an electrical item with effective signal control, making it an ideal choice for RF signal amplification. It has two electrodes; the gate, which is the input signal, and the drain, which is the output signal. The source of the signal is connected to the source electrode, and the gate voltage then controls the current flowing between the source and drain.

The AFT26H250-24SR6 is a common-source field effect transistor (JFET). This type of transistor uses a current flow through the channel between the drain and source electrodes to control the current flowing. It requires a negative bias voltage to be applied to the gate to turn it on, as opposed to a positive voltage for a p-type FET. This particular JFET is specifically designed for use in the 25 kHz to 250 MHz frequency range, making it ideal for use in wireless applications such as Wi-Fi or cellular networks.

The AFT26H250-24SR6 is a depletion-type device, meaning that it operates with a zero voltage bias. This means that is can be used to switch both AC and DC signals with minimal power consumption, as well as being able to amplify AC signals without distorting them. It also has a drain-gate capacitance of only 7 picofarads (pF), making it ideal for low-noise applications.

The AFT26H250-24SR6 is a reliable, cost-effective choice for designs requiring high-frequency signal amplification. It has very low distortion and power consumption, making it ideal for a variety of RF applications, including FM radio and television, cell phone and wireless networks, satellite communications, or any other application in which low noise and power consumption are important considerations.

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