AFT20S015GNR1 Allicdata Electronics

AFT20S015GNR1 Discrete Semiconductor Products

Allicdata Part #:

AFT20S015GNR1TR-ND

Manufacturer Part#:

AFT20S015GNR1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 65V 2.17GHZ TO270-2G
More Detail: RF Mosfet LDMOS 28V 132mA 2.17GHz 17.6dB 1.5W TO-2...
DataSheet: AFT20S015GNR1 datasheetAFT20S015GNR1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: LDMOS
Frequency: 2.17GHz
Gain: 17.6dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 132mA
Power - Output: 1.5W
Voltage - Rated: 65V
Package / Case: TO-270BA
Supplier Device Package: TO-270-2 GULL
Description

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The AFT20S015GNR1 is a N-channel RF Mosfet which is a type of transistor. It is widely used in a variety of applications, particularly those frequencies of 500 MHz and above. This field effect transistor is designed to be used in high frequency power amplifier design and it can handle a wide range of input signals. The AFT20S015GNR1 is not a general purpose RF power amplifier, so it should not be used in applications where precise low-noise performance is needed.

The AFT20S015GNR1 is a very versatile device and it is used in a wide range of applications, including transmitters and receivers in military, aerospace, and commercial communication systems. It is also frequently used in commercial and industrial telecommunications and data communications as it can handle very high input signals. It is commonly used in RF circuits such as RF amplifiers, RF filters, RF switches and RF mixers.

The AFT20S015GNR1 offers excellent gain and low noise, and it is suited for applications requiring very high frequency performance. It can be used in many different types of circuits, from amplifiers and filters to switches, mixers and adapters. The device is also capable of handling large input signals and has a low noise figure, which makes it ideal for applications such as audio amplifiers, who need a low noise figure.

The AFT20S015GNR1 is a Field Effect Transistor which operates on a metal oxide semiconductor technology, also known as an MOSFET. This technology uses an insulated layer of an oxide to separate the gate and source terminals. The gate of the device is used to control the flow of current between the source and drain terminals. By varying the gate voltage, the current flow can be controlled and this is used in many applications such as the control of voltage amplifiers.

The working principle of the AFT20S015GNR1 is similar to that of a junction field effect transistor and is based on the principle of carrier injection. When a voltage is applied to the gate, the electrons are injected into the channel region, which results in an inversion layer. This inversion layer acts like a gate, controlling the source-drain current and this is how the device controls the current flow. As the voltage is increased, the inversion layer becomes thicker and the current increases.

The AFT20S015GNR1 offers excellent performance due to its low noise figure, high gain and linearity. It is also a very versatile device and can be used in applications such as RF amplifiers, RF filters, RF switches, RF mixers and even as a voltage amplifier. The device also offers exceptional heat dissipation, which is essential if you plan to use it in high power applications.

The AFT20S015GNR1 is a versatile device that offers a wide range of applications and excellent performance in terms of gain, linearity and noise. Its ability to handle large signals and its low noise figure make it an ideal choice for applications such as high frequency power amplifiers, radio and television broadcasting, and audio amplifiers. Its small size, low cost and power efficiency make it a popular choice for many different designs.

The specific data is subject to PDF, and the above content is for reference

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