AFT20P140-4WGNR3 Allicdata Electronics
Allicdata Part #:

AFT20P140-4WGNR3-ND

Manufacturer Part#:

AFT20P140-4WGNR3

Price: $ 43.65
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 2CH 65V 1.91GHZ OM780-4GW
More Detail: RF Mosfet LDMOS (Dual) 28V 500mA 1.88GHz ~ 1.91GHz...
DataSheet: AFT20P140-4WGNR3 datasheetAFT20P140-4WGNR3 Datasheet/PDF
Quantity: 1000
250 +: $ 39.68200
Stock 1000Can Ship Immediately
$ 43.65
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Transistor Type: LDMOS (Dual)
Frequency: 1.88GHz ~ 1.91GHz
Gain: 17.8dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 500mA
Power - Output: 24W
Voltage - Rated: 65V
Package / Case: OM-780G-4L
Supplier Device Package: OM-780G-4L
Description

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The AFT20P140-4WGNR3 is a FET packaged in a small, compatible package. It provides low noise operation and is suitable for RF, low noise and high voltage amplification, as well as charge pump applications. It has a wide frequency range, making it suitable for applications in wireless and other digital communications.

AFT20P140-4WGNR3 features low gate leakage current, low capacitance, low on-resistance and high current handling, making it ideal for RF signal amplification. It is particularly suited for applications in the broadcast and cellular communications markets, and is suitable for use in high voltage and high frequency applications.

The AFT20P140-4WGNR3 is a MOSFET type FET and is manufactured using advanced fabrication technologies that allow for high speed and low noise operation. It is available in a wide variety of packages, making it suitable for a variety of applications. It is designed to provide high power and excellent signal performance, making it an ideal choice for wireless communication applications.

The working principle of the AFT20P140-4WGNR3 is based on the field effect transistor (FET) technology. FETs are three-terminal devices that rely on the charge state of a gate terminal to control the current flow between the two other terminals. FETs are primarily voltage-controlled devices, meaning that the current flowing through the device is largely determined by the voltage applied to the gate terminal. In the AFT20P140-4WGNR3, the gate voltage controls the on-resistance, which determines how quickly and efficiently the signal is able to pass through the FET. This makes it ideal for use in high-frequency and high-voltage applications, where it is important to have a fast signal transmission.

The AFT20P140-4WGNR3 is a versatile FET that can be used for a variety of applications. It is designed to provide low noise operation and is suitable for RF, low noise and high voltage amplification. In addition, it is well-suited for use in charge pump applications, which are useful for providing an adjustable output voltage. It is also well-suited for use in wireless and other digital communication applications, due to its wide frequency range.

In summary, the AFT20P140-4WGNR3 is a small but powerful FET packaged in a compatible package. It is suitable for RF, low noise and high voltage amplification, and is well-suited for use in charge pump applications. It is based on the FET technology and its gate voltage controls the on-resistance, making it ideal for high frequency and high voltage applications. It is also suitable for use in wireless and other digital communication applications, due to its wide frequency range. Therefore, the AFT20P140-4WGNR3 is an ideal choice for a number of different applications.

The specific data is subject to PDF, and the above content is for reference

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