Allicdata Part #: | AFT26H160-4S4R3-ND |
Manufacturer Part#: |
AFT26H160-4S4R3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 2CH 65V 2.5GHZ NI880X-4 |
More Detail: | RF Mosfet LDMOS 28V 500mA 2.5GHz 14.9dB 32W NI-880... |
DataSheet: | AFT26H160-4S4R3 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 2.5GHz |
Gain: | 14.9dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 500mA |
Power - Output: | 32W |
Voltage - Rated: | 65V |
Package / Case: | NI-880X-4L4S-8 |
Supplier Device Package: | NI-880X-4L4S-8 |
Description
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The AFT26H160-4S4R3 is a type of RF MOSFET Transistor. It has been designed for use in very high-frequency applications, and can be used in both linear and switching applications. The AFT26H160-4S4R3 is a high-power, high-frequency transistor. It features a maximum drain-source voltage of 250 volts and a maximum gate-source voltage of 60 volts. It has a maximum drain current of 4 amperes, a maximum power dissipation of 160 watts, and a maximum frequency of 1.5 GHz. This type of transistor is used in a variety of types of applications, such as in amplifier circuits, switches, converters, and receivers. It has a high-frequency response and is able to operate at frequencies ranging from DC (direct current) to microwave frequencies. The AFT26H160-4S4R3 is a n-channel enhancement mode device, meaning it can be used to amplify signals. The AFT26H160-4S4R3 is a great choice for those applications that require a reliable and efficient high-power, high-frequency transistor. Its rated power dissipation and high-frequency response make it suitable for a variety of applications. It is an ideal choice for amplifiers, switch circuits, and receivers in the VHF and UHF bands. The AFT26H160-4S4R3 works by letting either a positive or negative voltage be applied to its gate. When a voltage source is applied to the gate, it creates an electric field between the gate and the source. This electric field changes the number of mobile charge carriers in the transistor’s channel, and this is what controls the transistor’s current flow. Depending on the voltage applied to the gate, the transistor can either amplify or switch the applied voltage. The AFT26H160-4S4R3 is a great choice for RF applications and is capable of operating at high frequencies. Its high power dissipation and high-frequency response make it suitable for various applications in the VHF and UHF bands. Due to its reliable and efficient design, it is a great choice for those applications that require a reliable and efficient high-power, high-frequency transistor.
The specific data is subject to PDF, and the above content is for reference
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